BLF888AS,112
Transistor RF FET N-CH 110V 470MHz to 860MHz 5-Pin SOT-539B Bulk
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
- Excellent ruggedness (VSWR = 40 : 1 through all phases)
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
- Suitable for CW UHF and ISM applications
- High power gain
- High efficiency
- Designed for broadband operation (470 MHz to 860 MHz)
- Internal input matching for high gain and optimum broadband operation
- Excellent reliability
- Easy power control
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 110 | ||
| 5 | ||
| 860 | ||
| 470 | ||
| 225 °C | ||
| SOT-539B | ||
| Flange Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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