Adoption of wide bandgap technology has reached the tipping point, and its usefulness is now undeniable. Whether you’re exploring silicon carbide (SiC) or gallium nitride (GaN) power solutions, dive into the latest information from Avnet on these evolving technologies.

An electric car being charged by solar panels

Ultra-wide bandgap surpasses GaN and SiC in power electronics

By Avnet Staff - December 2, 2025

Gallium oxide power semiconductors promise to revolutionize applications from EV powertrains to renewable energy and aerospace electronics with a leap in power conversion efficiency.

Wide bandgap semiconductor material in its raw form

When GaN is too fast for your application, consider SiC instead

By Avnet Staff - April 24, 2023

The best power converters are not always the ones that switch the fastest. Gallium Nitride (GaN) switches faster than other power transistors, but sometimes it is too fast. Silicon Carbide (SiC) MOSFETs may sometimes be a better option.

Combining GaN and SiC for cost-effective power conversion

By Avnet Staff - April 20, 2023

The public image of silicon carbide (SiC) and gallium nitride (GaN) is as wonder materials. We know they are displacing older silicon technology, boosting the efficiency of power conversion stages. However, neither is a universal solution.