STMicroelectronics - SCTWA30N120
Silicon carbide Power MOSFET
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ= 150 °C), in an HiP247™ long leads package
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Features
- Very low switching losses
- Low power losses at high temperatures
- Higher operating temperature (up to 200 ˚C)
- Body diode with no recovery losses
- 16-bit data output
- Easy to drive
Applications
- Traction inverter
- EV charge station
- Photovoltaics
- Factory automation
- Motor drive
- Data center power supply
- OBC & DC/DC converter
Benefits
- Smaller form factor and higher power density
- Reduced size/cost of passive components
- Higher system efficiency
- Reduced cooling requirements and heatsink size
Block Diagram
Pin description
