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Uninterruptible Power Systems (UPS)

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Unlock unmatched efficiency with Infineon’s UPS solutions

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Power continuity is vital in today’s mission-critical environments, and Infineon is driving the evolution of Uninterruptible Power Supply (UPS) systems with cutting-edge technologies. As demand for higher efficiency, reliability, and scalability grows, our broad portfolio provides the foundation for next-generation UPS designs. These solutions enable greater energy density, improved thermal performance, and intelligent system control—ensuring uninterrupted power even under the most demanding conditions. Supported by system-level design resources and detailed block diagrams, Infineon empowers engineers to create UPS systems that are not only smarter and more compact, but also more robust and dependable.

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1. Offline/standby

Unlock unmatched efficiency with Infineon’s UPS solutions

2. Line-interactive

Unlock unmatched efficiency with Infineon’s UPS solutions

3. On-line/double-conversion

Unlock unmatched efficiency with Infineon’s UPS solutions

Product highlights

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A. IGK080B041S

CoolGaN™ bidirectional switch 40 V G3 in WLCSP, 6 mΩ


Unlock unmatched efficiency with Infineon’s UPS solutions


The IGK080B041S is a 40 V normally-off bidirectional power transistor housed in a small WLCSP 1.7x1.7 package, enabling high power density designs.

Key features:

  • 40 V bidirectional e-mode transistor
  • Drain-to-drain configuration
  • Bidirectional blocking capability
  • Low gate charge, low output charge
  • Qualified according to JEDEC

 

Learn more   | Download Data Sheet   


B. IGLR70R270D2S

CoolGaN™ Transistor 700 V G5


Unlock unmatched efficiency with Infineon’s UPS solutions


The IGLR70R270D2S GaN power transistor allows for increased efficiency at high-frequency operation.
As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.

Key features:

  • 700 V e-mode power transistor
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Low dynamic RDS(on)
  • High ESD robustness: 2 kV HBM - 1 kV CDM
  • Bottom-side cooled package
  • JEDEC qualified (JESD47, JESD22)

 

Learn more   | Download Data Sheet   

 

 

 

A. IMCQ-120R026M2H

CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package


Unlock unmatched efficiency with Infineon’s UPS solutions


The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application.

Key features:

  • VDSS = 1200 V @Tvj = 25°C
  • IDDC = 58 A @TC = 100°C
  • RDS(on) = 25.4 mΩ @VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

 

Learn more   | Download Data Sheet   


B. CoolSiC™ Schottky Diodes 650 V G5 and G6

High efficiency and price performance


Unlock unmatched efficiency with Infineon’s UPS solutions


Infineon's CoolSiC™ Schottky diodes 650 V deliver high price-performance, leveraging advanced silicon carbide production facilities, a solid track record, the upmost quality and a very granular product portfolio.

Key features:

  • No reverse recovery charge
  • Temperature-independent switching behavior
  • High dv/dt ruggedness
  • Improved figure of merit (Qc x VF)

 

Learn more   | Download Application Note   

 

 

 

A. IPT60T022S7

600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in TOLL (PG-HSOF-8) for an increased junction temperature sensing accuracy


Unlock unmatched efficiency with Infineon’s UPS solutions


The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation.

Key features:

  • Optimized price performance
  • Tailored for low-frequency switching
  • Reduced parasitic source inductance
  • Seamless diagnostics
  • Accurate and fast monitoring over time
  • High current capability
  • High power dissipation
  • Enhanced protection
  • Optimized thermal device utilization

 

Learn more   | Download Data Sheet   


B. 950 V CoolMOS™ PFD7

The next level for ultrahigh power density designs for energy-efficient high power lighting, consumer and industrial SMPS applications


Unlock unmatched efficiency with Infineon’s UPS solutions


The 950 V CoolMOS™ PFD7 high-voltage MOSFET series sets a new benchmark in 950 V superjunction (SJ) technologies, shaped by Infineon’s experience of more than 20 years in pioneering in superjunction technology innovation.

Key features:

  • Integrated ultra-fast body diode with BiC Qrr (reverse recovery charge)
  • Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss
  • Best-in-class  RDS(on) in various packages like 450 mΩ in DPAK or 60 mΩ in TO-247
  • Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V
  • ESD protection up to class 2 (HBM)
  • Best-in-class quality and reliability

 

Learn more   | Download Application Note   

 

 

 

A. Easy Power Modules

EasyPIM™, EasyPACK™ & EasyDUAL™ - from 6 A up to 200 A at 600 V / 650 V / 1200 V


Unlock unmatched efficiency with Infineon’s UPS solutions


The Easy family is the best choice for customers who are looking for a flexible and scalable power module solution.

Key features:

  • Compact module design
  • Reliable mounting system
  • PCB layout-friendly
  • Configuration flexibility
  • High reliability and quality

 

 

Learn more   | Download Data Sheet   


B. IGBT7 Modules

950 V/1200 V TRENCHSTOP™ IGBT7 - Higher power density and optimized switching


Unlock unmatched efficiency with Infineon’s UPS solutions


The 950 V/1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability.

Key features:

  • Overload capacity
  • Lower on state voltage
  • Enhanced controllability
  • Improved diode

 

Learn more   | Download Application Note

 

 

 

A. 2EDL05I06BF

600 V half-bridge gate driver IC with integrated bootstrap diode


Unlock unmatched efficiency with Infineon’s UPS solutions


EiceDRIVER™ Compact - Optimized 600 V half-bridge gate driver IC with LS-SOI technology to control IGBTs.

Key features:

  • Individual control circuits for both outputs
  • Filtered detection of under voltage supply
  • All inputs clamped by diodes
  • Off line gate clamping function
  • Asymmetric undervoltage lockout thresholds for high side and low side
  • Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology
  • Ultra fast bootstrap diode

 

 

Learn more   | Download Data Sheet   


B. 2ED2388S06F

650 V half-bridge gate driver with integrated bootstrap diode


Unlock unmatched efficiency with Infineon’s UPS solutions


650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.

Key features:

  • Operating voltages (VS node) up to + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode
  • 90 ns propagation delay
  • HIN, LIN logic input
  • Floating channel designed for bootstrap operation
  • Independent under voltage lockout (UVLO) for both channels
  • Logic operational up to –11 V on VS Pin
  • Negative voltage tolerance on inputs of –5 V
  • Maximum supply voltage of 25 V
  • 3.3 V, 5 V and 15 V input logic compatible

 

Learn more   | Download Application Note