Power continuity is vital in today’s mission-critical environments, and Infineon is driving the evolution of Uninterruptible Power Supply (UPS) systems with cutting-edge technologies. As demand for higher efficiency, reliability, and scalability grows, our broad portfolio provides the foundation for next-generation UPS designs. These solutions enable greater energy density, improved thermal performance, and intelligent system control—ensuring uninterrupted power even under the most demanding conditions. Supported by system-level design resources and detailed block diagrams, Infineon empowers engineers to create UPS systems that are not only smarter and more compact, but also more robust and dependable.
- CoolGaN™
- CoolSiC™ MOSFETs
- CoolMOS™
- Power Modules
- EiceDRIVER™
A. IGK080B041S
CoolGaN™ bidirectional switch 40 V G3 in WLCSP, 6 mΩ

The IGK080B041S is a 40 V normally-off bidirectional power transistor housed in a small WLCSP 1.7x1.7 package, enabling high power density designs.
Key features:
- 40 V bidirectional e-mode transistor
- Drain-to-drain configuration
- Bidirectional blocking capability
- Low gate charge, low output charge
- Qualified according to JEDEC
B. IGLR70R270D2S
CoolGaN™ Transistor 700 V G5

The IGLR70R270D2S GaN power transistor allows for increased efficiency at high-frequency operation.
As part of the CoolGaN™ G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency.
Key features:
- 700 V e-mode power transistor
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Low dynamic RDS(on)
- High ESD robustness: 2 kV HBM - 1 kV CDM
- Bottom-side cooled package
- JEDEC qualified (JESD47, JESD22)
A. IMCQ-120R026M2H
CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

The CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application.
Key features:
- VDSS = 1200 V @Tvj = 25°C
- IDDC = 58 A @TC = 100°C
- RDS(on) = 25.4 mΩ @VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage
- Robust against parasitic turn on
- Robust body diode for hard commutation
- .XT interconnection technology
B. CoolSiC™ Schottky Diodes 650 V G5 and G6
High efficiency and price performance

Infineon's CoolSiC™ Schottky diodes 650 V deliver high price-performance, leveraging advanced silicon carbide production facilities, a solid track record, the upmost quality and a very granular product portfolio.
Key features:
- No reverse recovery charge
- Temperature-independent switching behavior
- High dv/dt ruggedness
- Improved figure of merit (Qc x VF)
A. IPT60T022S7
600 V CoolMOS™ S7T SJ MOSFET with integrated temperature sensor in TOLL (PG-HSOF-8) for an increased junction temperature sensing accuracy

The CoolMOS™ S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation.
Key features:
- Optimized price performance
- Tailored for low-frequency switching
- Reduced parasitic source inductance
- Seamless diagnostics
- Accurate and fast monitoring over time
- High current capability
- High power dissipation
- Enhanced protection
- Optimized thermal device utilization
B. 950 V CoolMOS™ PFD7
The next level for ultrahigh power density designs for energy-efficient high power lighting, consumer and industrial SMPS applications

The 950 V CoolMOS™ PFD7 high-voltage MOSFET series sets a new benchmark in 950 V superjunction (SJ) technologies, shaped by Infineon’s experience of more than 20 years in pioneering in superjunction technology innovation.
Key features:
- Integrated ultra-fast body diode with BiC Qrr (reverse recovery charge)
- Best-in-class FOM RDS(on) x Eoss; reduced Qg, Ciss and Coss
- Best-in-class RDS(on) in various packages like 450 mΩ in DPAK or 60 mΩ in TO-247
- Best-in-class V(GS)th of 3 V and smallest V(GS)th variation of ±0.5 V
- ESD protection up to class 2 (HBM)
- Best-in-class quality and reliability
A. Easy Power Modules
EasyPIM™, EasyPACK™ & EasyDUAL™ - from 6 A up to 200 A at 600 V / 650 V / 1200 V

The Easy family is the best choice for customers who are looking for a flexible and scalable power module solution.
Key features:
- Compact module design
- Reliable mounting system
- PCB layout-friendly
- Configuration flexibility
- High reliability and quality
B. IGBT7 Modules
950 V/1200 V TRENCHSTOP™ IGBT7 - Higher power density and optimized switching

The 950 V/1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability.
Key features:
- Overload capacity
- Lower on state voltage
- Enhanced controllability
- Improved diode
A. 2EDL05I06BF
600 V half-bridge gate driver IC with integrated bootstrap diode

EiceDRIVER™ Compact - Optimized 600 V half-bridge gate driver IC with LS-SOI technology to control IGBTs.
Key features:
- Individual control circuits for both outputs
- Filtered detection of under voltage supply
- All inputs clamped by diodes
- Off line gate clamping function
- Asymmetric undervoltage lockout thresholds for high side and low side
- Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology
- Ultra fast bootstrap diode
B. 2ED2388S06F
650 V half-bridge gate driver with integrated bootstrap diode

650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.
Key features:
- Operating voltages (VS node) up to + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode
- 90 ns propagation delay
- HIN, LIN logic input
- Floating channel designed for bootstrap operation
- Independent under voltage lockout (UVLO) for both channels
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- Maximum supply voltage of 25 V
- 3.3 V, 5 V and 15 V input logic compatible