Combining the strengths of two great Infineon products: the Easy package, a bench-mark in low stray inductance and the 1200 V CoolSiC™ MOSFET enables customers to significantly reduce their system and operational costs. With regard to topology, these products meet the demand for EV charging applications such as high-frequency operation and large output variation of the DC-DC power stage.
Target applications
- EV-Charging
- DC/DC converter
- Welding
- High Frequency Switching application
- UPS systems
- Solar applications
Features
- CoolSiC™ MOSFET in Easy package for lowest stray inductance
- Superior gate-oxide reliability
- Enables higher fsw operation due to nearly 80% lower switching losses compared to Si
- Intrinsic diode with low reverse-recovery charge
- Highest threshold voltage of Vth > 4 V
- Multiple switches in the small Easy package for a very compact solution
- CoolSiC™ MOSFET as an addition to Infineon’s extensive chip portfolio
Key components
- F4-23MR12W1M1_B11
- F3L15MR12W2M1_B69
Benefits
- Operation at higher switching speeds up to 50 kV/µs
- Longer lifetime of converter system
- Reduced system and operational costs due to high efficiency and reduced cooling effort
- Increased power density
- Highest robustness against parasitic turn-on
- Easier system integration and reduction of manufacturing effort
- Optimized hybrid module solutions for individual converter topologies
Infineon
Infineon designs, develops, manufactures and markets a broad range of semiconductors and system solutions.
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