J-SERIES SIPM
Silicon Photomultiplier Sensors
onsemi's J-Series silicon photomultiplier (SiPM) sensors have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark count rates of 50 kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process they feature an exceptional breakdown voltage uniformity of ±250 mV.
J-Series sensors are available in 3 mm, 4 mm and 6 mm sizes packaged in a TSV chip scale package that is compatible with industry standard, lead-free, reflow soldering processes. J-Series sensors also feature onsemi's unique fast output for fast timing capability.
Features
- High-density microcells
- J-Series sensors feature ON Semiconductor's unique 'fast output' terminal
- Temperature stability of 21.5 mV/°C
- Exceptional breakdown voltage uniformity of ±250 mV
- Available in a reflow solder compatible TSV chip-scale package
- Ultra-low dark count rates of 50 kHz/mm2 typical
- Optimized for high-performance timing applications, such as ToF-PET
- 3 mm, 4 mm and 6 mm sensor sizes
- Bias voltage of <30 V
Applications
- Medical Imaging
- Hazard & Threat
- 3D Ranging & Sensing
- Biophotonics & Sciences
- High Energy Physics
Benefits
- Results in a 50% photon detection efficiency (PDE) at 420 nm
- Improved signal rise time and the microcell recovery time
- Negates the need for active voltage control
- Industry-leading uniformity
- TSV package results in almost zero deadspace allowing the creation of high fill factor arrays and is ferrous-metal free
