New Product Introduction

Infineon StrongIRFET™ in TO-247AC package

EBV presents Infineon’s latest 200-300 V StrongIRFET™ devices, which are optimized for both high current and low RDS(on)

Infineon StrongIRFET™ product image

EBV presents Infineon’s latest 200-300 V StrongIRFET™ devices, which are optimized for both high current and low RDS(on) making them the ideal solution for industrial applications. The flagship IRF200P222 offers a 40 percent increase in current carrying capability and 32 percent lower RDS(on) when compared to previous generation devices leading to increased power density and reduction in I2R losses.

Key features

  • RDS(on) improvement when compared to previous generations
  • High-current carrying capability
  • 175°C junction temperature rated
  • Gate, avalanche, and dynamic dV/dT ruggedness

 

Additional features

  • Fully characterized capacitance and avalanche SOA Industry standard footprint
  • Reduced conduction losses
  • RDS(on) improvement when compared to previous generations, > 30% @ 200V
  • High-current carrying capability, up to 40% higher than previous generations
  • Reduction in BOM count
  • Ideal for industrial applications
  • Rugged, reliable performance
  • Accommodates legacy designs

 

Applications

  • Uninterruptible power supply (UPS)
  • Class D audio amplifier
  • Solar power inverter
  • Switched mode power supply (SMPS)
  • Brushed and BLDC motor drive
  • Battery powered circuits

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