New Product Information

Vishay SiR638ADP© n-channel 40 V (D-S) MOSFET

Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size

Vishay SiR638ADP product picture

Vishay's next-generation TrenchFET® family of N-Channel power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN offer industry-low on-resistance and low total gate charge in the PowerPAK®SO-8 and 1212-8S packages. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size.

 

Key features

  • TrenchFET® Gen IV power MOSFET
  • 100 % Rg and UIS tested
  • Qgd/Qgs ratio < 1 optimizes switching
  • 100 % Rg and UIS tested
     

Additional features

  • TrenchFET® Gen IV power MOSFET
  • Qgd/Qgs ratio < 1 optimizes switching characteristics

 

Applications

  • Synchronous rectification
  • OR-ing
  • High power density DC/DC
  • VRMs and embedded DC/DC
  • DC/AC inverters
  • Load switch

Do you have a Question?

Contact EBV

If you need any assistance, please click below to find your closest EBV sales office.

Related links



Related markets



Related technologies