New Product Information

Vishay SiA468DJ 30V n-channel TrenchFET® Gen IV power MOSFET

NEW 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased power density and efficiency for consumer electronics and power supplies

Vishay SiA468DJ product picture

NEW 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased power density and efficiency for consumer electronics and power supplies. Offered in the ultra compact PowerPAK® SC-70 package, provides the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.

The MOSFET released today is one of the most compact 30 V solutions available for DC/DC conversion and load switching for battery management

SiA468DJ features extremely low on-resistance of 8.4 mΩ at 10 V and 11.4 mΩ at 4.5 V.

 

Key features

  • TrenchFET® Gen IV power MOSFET
  • 100 % Rg tested
  • The highest continuous drain current capability
  • Very low RDS-Qg FOM and Qgd elevate efficiency

 

Additional features

  • Increase power density of your design
  • 60 % smaller than devices in the PowerPAK 1212
  • 37.8 A continuous drain current is 68 % higher than previous-generation devices and 50 % higher than the closest competing solution

 

Applications

  • DC/DC converters and synchronous buck converters
  • Lower ringing voltage from soft turn-on
  • High efficiency from fast turn-off
  • Lower shoot-through possibility
  • Battery charging and protection
  • Load switch

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