New Product Introduction

Vishay SiR668DP Siliconix TrenchFET® Gen IV n-channel MOSFET

These new devices utilize a new high-density design and offer industry-low on-resistance and low total gate charge in the PowerPAK®SO-8 package

Vishay SiR668DP product image

Vishay Siliconix TrenchFET® Gen IV N-Channel MOSFETs are Vishay's next-generation TrenchFET® family of N-Channel power MOSFETs. These new devices utilize a new high-density design and offer industry-low on-resistance and low total gate charge in the PowerPAK®SO-8 package. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption. Typical applications include high power DC/DC converters, synchronous rectification, solar micro inverters, and motor drive switch.

 

Key features

  • Very low R<sub>DS</sub> - Qg figure-of-merit (FOM)
  • Tuned for the lowest R<sub>DS</sub> - Q<sub>oss</sub> FOM
  • 100 % R<sub>g</sub> and U<sub>IS</sub> tested
  • TrenchFET® Gen IV power MOSFET

 

Additional features

Next-generation technology optimizes several key specifications

  • Down to industry best RDS(on) of 0.00135Ω at VGS = 4.5V 
  • Down to ultra-low RDS(on) of 0.001 Ω at VGS = 10V
  • Very low Qgd and exceptionally low QGD/QGS ratio: < 0.5
  • QGD/QGS ratio down to 0.3
  • Improved immunity to CdV/dt gate coupling

 

Applications

  • Synchronous rectification
  • Primary side switch
  • DC/DC converters
  • OR-Ing
  • Power supplies
  • Motor drive control
  • Battery and load switch

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