New Product Information

STMicroelectronics SCT10N120 silicon carbide power MOSFET

EBV ELEKTRONIK presents new silicon carbide Power MOSFET exploiting the advanced, innovative properties of wide bandgap materials.

STMicroelectronics-SCT10N120-product-picture

EBV ELEKTRONIK presents new silicon carbide Power MOSFET exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temp.The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.

 

Key features

  • Very tight variation of on-resistance vs. temperature
  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (TJ =200 °C)
  • Very fast and robust intrinsic body diode

     

Additional features

  • Very tight variation of on-resistance vs. temperature
  • Slight variation of switching losses vs. temperature
  • Very high operating temperature capability (TJ =200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

 

Applications

  • Solar inverters
  • UPS
  • Motor drives
  • High voltage DC-DC converters
  • Switch mode power supplies

BUY ONLINE AT AVNET EMEA STORE


Do you have a Question?

Contact EBV

If you need any assistance, please click below to find your closest EBV sales office.

Links and documents



Related markets



Related technologies