New Product Introduction

NXP MRF1K50N 50 V wideband RF power LDMOS transistor

This high ruggedness device, MRF1K50N is designed for use in high VSWR industrial.

NXP-MRF1K50N-product-picture

This high ruggedness device, MRF1K50N is designed for use in high VSWR industrial, scientific and medical applications, such as laser generation, plasma etching, particle accelerators and MRI scanners, as well as FM radio and VHF broadcast.Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

 

Key features

  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range
  • Can be used single - ended or in a push-pull configuration
  • Characterized from 30 to 50 V for ease of use

 

Additional features

  • High drain-source avalanche energy absorption capability
  • Unmatched input and output allowing wide frequency range utilization
  • Device can be used single - ended or in a push-pull configuration
  • Characterized from 30 to 50 V for ease of use
  • Suitable for linear application
  • Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
  • Recommended driver: MRFE6VS25N (25 W)

 

Applications

  • Industrial, Scientific, Medical (ISM)
  • Laser generation
  • Plasma etching
  • Particle accelerators
  • MRI and other medical application
  • Industrial heating, welding and drying system
  • Broadcast
  • Radio broadcast
  • VHF TV broadcast
  • Aerospace
  • VHF omnidirectional range (VOR)
  • HF and VHF communications
  • Weather radar
  • Mobile Radio
  • VHF and UHF base stations

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