New Product Introduction

NXP AFM906N RF LDMOS Transistor for VHF and UHF radios

This is a 6 watt, 7.5 V LDMOS transistor in 4x6 mm DFN SMD package designed for handheld two-way radio applications with frequencies from 136 to 941 MHz.

NXP-AFM906N-RF-LDMOS-Transistor-product-picture

This is a 6 watt, 7.5 V LDMOS transistor in 4x6 mm DFN SMD package designed for handheld two-way radio applications with frequencies from 136 to 941 MHz.The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common-source amplifier applications in handheld radio equipment.

 

Key features

  • Characterized for operation from 136 to 941 MHz
  • Unmatched I/O allowing wide frequency range utilization
  • Integrated ESD protection
  • High linearity; suitable for TETRA, SSB. etc

 

Additional features

  • 4x6 mm DFN SMD package
  • Characterized for operation from 136 to 941 MHz
  • Unmatched input and output allowing wide frequency range utilisation
  • Extreme ruggedness (>65:1 VSWR)
  • Integrated ESD protection
  • Wideband - full power across the band
  • High linearity; suitable for TETRA, SSB. etc

 

Applications

  • Output stage for VHF band handheld LMR radio
  • Output stage UHF band handheld LMR radio
  • Output stage for 800-900 MHz handheld LMR radio
  • Generic 6 W driver for ISM and broadcast final stage

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