New Product Introduction

Infineon IRS2008S new 200 V half-bridge driver

These MOSFET drivers provide full driver capability with fast switching speeds, designed-in ruggedness, and low power dissipation.

EBV presents Infineon's gate driver family of 200 V, tailored for low voltage (24 V, 36 V, and 48 V) and mid-voltage (60 V, 80 V, and 100 V) motor drive applications.

These MOSFET drivers provide full driver capability with fast switching speeds, designed-in ruggedness, and low power dissipation. The 200 V drivers ICs are offered in standard packages and pin-out configurations with various logic input options for high design flexibility and fast time-to-market. IRS2008S is the latest addition to the 200 V gate driver ICs.

 

Key features

  • Ultra-high power efficiency
  • Fast and reliable switching
  • Low-cost bootstrap power supply for BOM savings
  • Easy-to-use

 

Additional features

Features:

  • Fully operational to +200 V offset voltage
  • 290 / 600 mA sink/source current
  • Undervoltage lockout protection for both VCC and VBS
  • Logic operational for VS of -8 V
  • 3.3 V, 5 V, 15 V input logic compatible
  • Tolerant to negative transient voltage, dV/dt immune
  • Floating channel designed for bootstrap operation
  • Matched propagation delay for both channels
  • Deadtime and cross-conduction prevention logic
  • Shutdown input turns off both channels
  • Available in small 8-pin SOIC

Benefits:

  • Fast and reliable switching with protection under abnormal operation assures increased device reliability
  • Easy-to-use, straight-forward design for quick design-in and fast time to market

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