New Product Introduction

Infineon DF11MR12W1M1&DF23MR12W1M1 easy 1B booster topology

DF11MR12W1M1 & DF23MR12W1M1 are the lead products based on the CoolSiC™ Mosfet technology.

Infineon DF11MR12W1M1 & DF23MR12W1M1 product image

EBV presents the lead products based on the CoolSiC™ Mosfet technology:

EasyDUAL™ 1B 1200 V / 11 and 23 mΩ halfbridge modules with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology and the Easy 1B 1200 V / 11 and 23 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology.

 

Key features

  • Low device capacitances
  • Temperature independent switching losses
  • Intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics

 

Benefits

  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation

 

Applications

  • Photovoltaic inverter
  • UPS
  • EV charger
  • Energy storage / battery charging

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