While capturing a still image or a video clip on a bright, sunny day can be straightforward, the situation becomes much more complicated when lighting is uncontrolled. A street at night, an underground garage, a dark corner with little illumination – these are the type of situations where a standard image sensor may not be sufficient.
Fortunately, several different technologies are available which can enhance an image sensor’s ability to successfully capture an image under these types of challenging lighting. Specialized color filter arrays increase the amount of visible light available for capture, or enable capture of near-infrared light. Pixel designs can be modified to maximize the amount of light that can be captured by the image sensor, and advanced electron multiplication technology can enable detection under sub-lux illumination.
ON Semiconductor has implemented these technologies – and more – in a portfolio of image sensors designed for use in challenging lighting conditions. See how these advanced devices, available from Avnet, can help solve your low-light imaging needs.
|IT-EMCCD||Interline Transfer Electron Multiplication CCD combines the high imaging performance available from Interline Transfer CCD technology with the sub-electron noise floor provided by electron multiplication.||Learn more|
|RGB-IR||RGB-InfraRed is a different filter type where one green spot in the standard Bayer Color Filter Array (CFA) is substituted with a spot which admits the Near-Infrared (NIR) wavelength to reach the sensor.||Learn more|
|Clarity+||Clarity+ is an alternative filter where, in the standard Bayer Color Filter Array (CFA), the green spots are substituted with clear spots, allowing the entire visible spectrum to pass through.||Learn more|
|HDR||High-Dynamic Range is a technology more efficient for photo capturing than for video. To take an HDR photo, the sensor takes different shots of the same scene at different exposure times and then mixes the shots by selecting the best.||Learn more|
|BSI||Back-Side Illumination, as the definition suggests, is referring to the part of the sensor which is actually exposed to the light.||Learn more|
|Part||Resolution (Mp)||Pixel size (µm)||Optical format||Frame rate||Dynamic range max. (dB)||SNR||Output interface||Operating temperature||Package type||Implemented technologies|
|RGB-IR||IT-EMCCD||HDR on chip||HDR off chip||BSI|
|AR0132AT||1,2||3.75||1/3"||45 fps||115 dB||44 dB||HiSPi™, Parallel||-40 to +105 °C||IBGA-63||X|
|AR0136AT||1,2||3.75||1/3"||45 fps||120 dB||43.9 dB||HiSPi™, Parallel||-40 to +105 °C||IBGA-63||X||X|
|AR0140||1||3.0||1/4"||60 fps||96 dB||41 dB||HiSPi™, Parallel||-40 to +105 °C||IBGA-63||X|
|AR0230AT||2||3.0||1/2.7"||30 fps||96 dB||41 dB||HiSPi™, Parallel||-40 to +105 °C||IBGA-80||X|
|AR0238||2||3.0||1/2.7"||60 fps||96 dB||41 dB||HiSPi™, Parallel||-30 to +70 °C||PLCC-48||X||X|
|AR0263||2,1||1.4||1/6"||60 fps||66,5 dB||37.5 dB||MIPI||-30 to +70 °C||ODCSP-35||X||X|
|AR0331||3,1||2.2||1/3"||60 fps||100 dB||39 dB||HiSPi™, Multi||-30 to +85 °C||IBGA-63, ILCC-48||X|
|AR0521||5,1||2.2||1/2.5"||60 fps||96 dB||40 dB||HiSPi™, MIPI||-30 to +85 °C||mPLCC,iBGA-63||X||X|
|AR1335CS||13||1.1||1/3.2"||120 fps||69 dB||37 dB||MIPI||-30 to +70 °C||CSP-63||X||X|
|AR1820HS||18,1||1.25||1/2.3"||24 fps||65,8 dB||36.3 dB||HiSPi™, MIPI||-30 to +70 °C||IBGA-60||X|
|KAE-02150||2,1||5.5||2/3"||30 fps||86 dB||X||Analog||-40 to +70 °C||CPGA-135, CPGA-143||X|
|KAE-02152 (NIR)||2,1||5.5||2/3"||30 fps||86 dB||X||Analog||-40 to +70 °C||CPGA-135, CPGA-143||X|
|KAE-04471||4.4||7.4||4/3"||15 fps||92 dB||X||Analog||-40 to +70 °C||CPGA-155||X|
|KAE-08151||8,2||5.5||4/3"||8 fps||86 dB||X||Analog||-40 to +70 °C||CPGA-155||X|