ON Semiconductor Wide Band Gap Technology – Enabling Mega Trend Applications

AVS ON Semi WBG - Sample Registration (LC)

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Silicon Carbide (SiC) and Gallium Nitride (GaN) are the next generation materials for high performance power conversion and electric vehicle

The Wide Band Gap (WBG) materials will power future applications for high performance in areas such as vehicle electrification, solar and wind power, cloud computing, EV (electric vehicle) charging, 5G communications and many more. ON Semiconductor is contributing to the development of universal standards to help advance the adoption of Wide Band Gap (WBG) power technologies.

Wide Band Gap technologies provide advanced performance:

  • Faster Switching
  • Lower Power Losses
  • Increased Power Density
  • Higher Operating Temperatures

This performance is aligned with future market demands and trends:

  • Higher Efficiency
  • Compact Solutions
  • Lower Weight
  • Reduced System Cost
  • Increased Reliability
ON Semiconductor Wide Band Gap technology product sample image

 

Applications

  • Solar and Wind Power
  • Vehicle Electrification
  • Motor Drive
  • Cloud Computing
  • EV Charging
  • 5G Communication

ON Semiconductor’s SiC portfolio comprising:

ON Semiconductor provides a unique Ecosystem focused around WBG solutions

  • SiC Diodes geared towards ruggedness 
  • SiC MOSFETs geared towards ruggedness and speed
  • Drivers designed for WBG devices
  • FIT (Flexible Interface Technology) design modeling of SiC and GaN power devices

 

The portfolio of Silicon Carbide (SiC) diodes from ON Semiconductor include AEC-Q101 Qualified and PPAP Capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.

 

Product family

650 V SiC Diodes

ON Semiconductor's portfolio of 650 V Silicon Carbide (SiC) diodes

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1200 V SiC Diodes

ON Semiconductor's portfolio of 1200 V Silicon Carbide (SiC) diodes

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1700 V SiC Diodes

ON Semiconductor's portfolio of 1700 V Silicon Carbide (SiC) diodes

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Product news

Product Voltage IF(ave) (A) VF (V) Package
FFSH2065B-F085 650 20 1.7 TO-247-2LD
FFSM0665B 650 6 1.7 PQFN-4
FFSM0865B 650 8 1.7 PQFN-4
FFSM1065B 650 10 1.7 PQFN-4
FFSM2065B 650 20 1.7 PQFN-4
FFSB0665A 650 6 1.75 D2PAK2 (TO-263-2L)

Product news

Product Description Package
AFGH75T65SQ Automotive IGBT with SiC copack diode, 650V, 75A TO-247-3LD
AFGHL75T65SQDC Automotive IGBT with SiC copack diode, 650V, 75A TO-247-3LD
AFGHL50T65SQDC Automotive Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD TO-247-3LD

SiC Modules contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V.

Si/SiC Hybrid Modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar inverters, energy storage systems and uninterruptible power supplies.

 

Product news

Product Description Package
NNXH40B120MNQ0 Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode Q0
NXH40B120MNQ1 Full SiC MOSFET Module, Three Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode PIM32, 71x37.4 (SOLDER PIN)
NXH80B120MNQ0 Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode Q0
NXH300B100H4Q2F2 Si/SiC Hybrid Modules, 3 Channel flying capacitor Boost 1000 V, 100 A IGBT, 1200 V, 30 A SiC Diode PIM53, 93x47 (PRESSFIT)
PIM53, 93x47 (SOLDER PIN)
NXH350N100H4Q2F2P1G SiC Hybrid Module, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode PIM42, 93x47 (PRESSFIT)
PIM42, 93x47 (SOLDER PIN)
NXH450B100H4Q2 Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode PIM56, 93x47 (PRESSFIT)
PIM56, 93x47 (SOLDER PIN)

The portfolio of Silicon Carbide (SiC) MOSFETs from ON Semiconductor are designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.

 

Product family

900 V SiC MOSFETs

ON Semiconductor's portfolio of 900 V Silicon Carbide (SiC) MOSFETs

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1200 V SiC MOSFETs

ON Semiconductor's portfolio of 1200 V Silicon Carbide (SiC) MOSFETs

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Product news

Industrial Automotive Voltage (V) RDSon (mΩ) Package
NTBG020N090SC1 NVBG020N090SC1 900 20 D2PAK7 (TO-263-7L HV)
NTBG060N090SC1 NVBG060N090SC1 900 60 D2PAK7 (TO-263-7L HV)
NTHL020N090SC1 NVHL020N090SC1 900 20 TO-247-3LD
NTHL060N090SC1 NVHL060N090SC1 900 60 TO-247-3LD
NTBG040N120SC1 NVBG040N120SC1 1200 40 D2PAK7 (TO-263-7L HV)
NTBG080N120SC1 NVBG080N120SC1 1200 80 D2PAK7 (TO-263-7L HV)
NTBG160N120SC1 NVBG160N120SC1 1200 160 D2PAK7 (TO-263-7L HV)
NTHL080N120SC1A NVHL080N120SC1A 1200 80 TO-247-3LD
NTBG020N120SC1 NVBG020N120SC1 1200 20 D2PAK7 (TO-263-7L HV)
NTH4L020N120SC1 NVH4L020N120SC1 1200 20 TO-247-4
NTH4L040N120SC1 NVH4L040N120SC1 1200 40 TO-247-4
NTH4L080N120SC1 NVH4L080N120SC1 1200 80 TO-247-4
NTH4L160N120SC1 NVH4L160N120SC1 1200 160 TO-247-4
NTHL020N120SC1 NVHL020N120SC1 1200 20 TO-247-3LD
NTHL040N120SC1 NVHL040N120SC1 1200 40 TO-247-3LD
NTHL160N120SC1 NVHL160N120SC1 1200 160 TO-247-3LD

The portfolio of Gate Drivers from ON Semiconductor includes GaN, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. ON Semiconductor Gate Drivers provide features and benefits that include High system efficiency high reliability.

 

Product news

Product Description Package
NCD57000 Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation SOIC-16W
NCD57001 Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation SOIC-16W
NCD57001FDWR2G Isolated High Current IGBT Gate Driver SOIC-16W
NCD57200 Half Bridge Gate Driver (Isolated High Side & Non-Isolated Low Side) SOIC-8
NCP51705 SiC MOSFET Driver, Low-Side, Single 6 A High-Speed WQFN-24
NCV51705 Automotive SiC MOSFET Driver, Low-Side, Single 6 A High-Speed QFNW-24
NCV57000 Automotive IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation SOIC-16W
NCV57001 Automotive IGBT Gate Driver, Isolated High Current and High Efficiency, with Internal Galvanic Isolation SOIC-16W

The ideal performance characteristics provided by the portfolio of Gate Drivers from ON Semiconductor that enable them meet the requirements of specific applications include Automotive Power Supplies, HEV/EV Traction Inverters, EV Chargers, Resonant converters, Half-bridge and full-bridge converters, Active clamp Flyback converters, Totem pole and more.

 

Product news

Product Description Package
NCP51820 High Performance, 650 V Half Bridge Gate Driver for GaN Power Switches QFN-15

Webinar ON Semiconductor Wide Bandgap | Avnet Silica

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Participate in our webinar wherever you are

Wide Bandgap Semiconductor Application Testing, Translating Tests to Operational Reliability

18 Sep 2020 - 31 Dec 2020
Online, on-demand

In this Webinar we will show you how parametric testing and reliability investigations of these devices are done at ON Semiconductors and the importance of these tests for applications.

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