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Infineon CoolSiC MOSFET Title (MT)

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Infineon CoolSiC™ MOSFET

Infineon CoolSiC MOSFET main content 1 (MM)

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Infineon CoolSiC™ MOSFET technology as next essential step towards an energy-smart world

Silicon Carbide (SiC) is a compound semiconductor material increasing the efficiency of power electronics in a wide variety of applications. Due to its wide bandgap characteristics silicon carbide components enable a higher switching frequency which in turn increases power density while reducing system costs.

As next step towards an energy smart world, Infineon recommends the recently launched CoolSiC™ MOSFET technology that enables radically new product designs and never before seen levels of efficiency and reliability become now possible.

The CoolSiC™ MOSFET offers a series of advantages compared to the traditional Si based switches: These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, temperature independent low switching losses, no reverse recovery losses of the anti-parallel diode, and threshold-free on-state characteristics. All this results in a robust CoolSiC™ MOSFET, ideal for hard- and resonant-switching topologies, which can be driven like an IGBT using standard drivers. By delivering the highest level of efficiency and switching frequencies unreachable by Si based switches system size reduction, power density increases and high lifetime reliability are able to be achieved.

CoolSiC™ MOSFET first products in 1200 V are dedicated for photovoltaic inverters, EV charging and energy storage.

Further lead products - CoolSiC™ MOSFET in TO-247-3pin and -4pin packages - are coming very soon.

Key features

  • Low device capacitances
  • Temperature independent switching losses
  • Intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics

Key benefits

  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
Infineon CoolSic Mosfet Easy 1B

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CoolSiC™ Mosfet in Easy1B

EasyDUAL™ 1B 1200 V / 11 and 23 mΩ halfbridge modules with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology and the Easy 1B 1200 V / 11 and 23 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology are the lead products for the CoolSiC™ Mosfet technology already available:

Part number Configuration RDS(on) VDS
DF11MR12W1M1_B11 Booster with NTC 11mΩ 1200V
DF23MR12W1M1_B11 Booster with NTC 23mΩ 1200V
FF11MR12W1M1_B11 Half bridge with NTC 11mΩ 1200V
FF23MR12W1M1_B11 Half bridge with NTC 23mΩ 1200V

Gate driver ICs

Front view image of Infineon EiceDRIVER 1EDC Compact driverAs every switch needs a driver we present a range of EiceDRIVER™ families with a perfect fit to CoolSiC™ MOSFET. Ultra-fast switching 1200 V power transistors as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections.

The following recommended drivers combine most important key features and parameters for CoolSiC™ MOSFET driving such as tight propagation delay matching, precise input filters, wide output side supply range, negative gate voltage capability, and extended CMTI capability:

Product Part number Typ. peak drive current VCC2-VEE2 Typ. Prop. Delay Active Miller Clamp Other key features
1EDC/1EDI Compact Isolated High-Side Driver family 1EDI20I12MF
DSO-8 150 mil
3.5 A 20.0 V ≤ 300 ns Yes functional isolation
1EDC20H12AH
DSO-8 300 mil
9.4 A 40.0 V ≤ 125 ns No 8 mm creepage clearance;
UL 1577 certified with VISO = 3 kV(rms) for 1 s
1EDC60H12AH
DSO-8 300 mil
3.5 A 40.0 V ≤ 125 ns No 8 mm creepage clearance;
UL 1577 certified with VISO = 3 kV(rms) for 1 s
1EDC20I12MH
DSO-8 300 mil
3.5 A 20.0 V ≤ 300 ns Yes 8 mm creepage clearance;
UL 1577 certified with VISO = 3 kV(rms) for 1 s
1ED-F2 Isolated High-Side Driver with Integrated Protection 1ED020I12-F2
DSO-16 300 mil
2.0 A 28.0 V ≤ 170 ns Yes Short circuit clamping; DESAT protection; active shutdown
2ED-F2 Isolated Dual High-Side Driver with Integrated Protection 2ED020I12-F2
DSO-36
2.0 A 28.0 V ≤ 170 ns Yes Short circuit clamping; DESAT protection; active shutdown