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ON Semiconductor FFSH15120ADN - silicon carbide Schottky diode

SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density andreduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions.

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI and reduced system size and cost.

Key Features

  • Max Junction Temperature 175 °C
  • Avalanche Rated 80 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
     

Applications

  • General Purpose
  • SMPS, Solar Inverter, UPS
  • Power Switching Circuits
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