New Product Introduction

STMicroelectronics STPSC10065DLF

STPSC10065DLF - 650 V 10 A power Schottky silicon carbide diode

STMicroelectronics STPSC10065DLF in PowerFLAT™ 8x8 HV - front and back side

This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Qualified in low profile package, the STPSC10065DLF in PowerFLAT™ 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.


Key features

  • Less-than-1mm height package
  • High creepage package
  • No or negligible reverse recovery
  • Temperature independent switching behavior
  • High forward surge capability
  • Very low drop forward voltage
  • Power efficient product
  • ECOPACK2 compliant component


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