New Product Introduction

Nexperia GaN FETs

Gallium Nitride FETs from Nexperia - efficient and effective high-power FETs

Nexperia's GaN FETs in TO-247/SOT429 package - front and back side

Whether designing a motor drive/controller for the next generation of battery-electric vehicles, or a power supply for the latest 5G telecommunication networks, Nexperia’s GaN FETs will be key to your solution. Offering high power performance and high-frequency switching, the design and structure of Nexperia's normally-off GaN FET products ensure standard, low-cost gate drivers can be used in your design.


Key features

  • VDS : 650 V
  • Threshold voltage: +4 V
  • Transient over voltage V DS : 800 V
  • VGS range: 20 V



  • Easy to drive
  • Inherently safe against parasitic turn on
  • Reduced losses in reverse conduction mode
  • Ultra low Qrr for fast switching
  • Transient over voltage capability
  • Robust gate oxide


  GAN063-650WSA GGAN041- 650WSB
VDS 650 V 650 V
RDS(on) Max 60 mΩ 41 mΩ
Package TO-247 (SOT429) TO-247 (SOT429)
Production release February 2019 Q4 2020
Samples available Now Q2 2020


Topologies & applications


  • Totem Pole PFC
  • Multiphase inverters


  • Server & Telecom Power supplies
  • Battery Storage & UPS
  • Industrial automation
  • OBC & DC DC


Developing for the future

Nexperia  remains focussed on the development of very high reliability-high quality power GaN FETs, with continued development in:

  • Automotive qualification
  • 900 V and upwards
  • Half-bridge package solutions
  • Clip-bond packaging
  • Bare die


Block diagram

Block diagram for Nexperia's GaN FET


Related videos



Register to win GaN FETs

Fill out the form below and participate on our raffle for the chance to win set of high-power Gallium Nitride FETs