New Product Introduction

ON Semiconductor NTHL080N120SC1

NTHL080N120SC1 - N‐Channel Silicon Carbide MOSFET 1200 V, 80 mΩ, TO247-3L

ON Semiconductor NTHL080N120SC1  product image

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

  • 1200V rated
  • Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
  • High Speed Switching and Low Capacitance
  • 100% UIL Tested

Applications

  • PFC
  • Boost Inverter
  • PV Charging
     
Product Compliance Description Package Container
      Type Case Outline Type Qty.
NTHL080N120SC1 Pb-free
Halide free
N‐Channel Silicon Carbide MOSFET 1200 V, 80 mΩ, TO247−3L TO-247-3LD 340CX Tube 450

 

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