New Product Introduction

ON Semiconductor FFSB0665A

The FFSB0665A SiC Schottky Diode with 650V, 6A, D2PAK uses a completely new technology and is suited for applications like PFC, industrial power and more.

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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Features

  • Max Junction Temperature 175 °C
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

Applications

  • PFC
  • Industrial Power
  • Solar
  • EV Charger
  • UPS
     

 

Part electrical specifications

 

Product Compliance Status Device grade Configuration VRRM (V) IF(ave) (A) VF (Max) Package Type
FFSB0665A Pb-free/
Halide free
Active Commercial Single 650 6 1.75 D2PAK-3 / TO-263-2


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Links & Documents



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