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Wide Bandgap Technology

Semiconductors using wide bandgap (WBG) technologies were in a development phase for quite some time. Finally, after their behavior and failure mechanisms have been thoroughly analyzed and well understood, WBG semiconductors are now emerging in the global market, bringing some significant advantages over Si-based solutions. With considerably higher operating temperatures (up to 300 °C vs. around 150 °C) and highly efficient switching performance at much higher frequencies, WBG semiconductors allow for smaller, faster, and more reliable equipment, paving the way for the next industrial revolution.

The following main areas of application give insight in what is new in WBG devices offer and how it fits to target application.

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EV Charging

With electric vehicles (EV) growing number and higher autonomy demand, EV chargers total installed power and power per charger is growing. As EV charger operators are buying and selling energy any loss is power converters is impacting operational costs and business margin. Besides total system cost this is the main driver for SiC technology to be used in DC chargers. Installed power in DC chargers can go from less than 20kW for household wall boxes to 350kW in highway fast DC charging stations. Typical topology includes PFC stage at the input and DC-DC stage to regulate voltage applied to the battery. Isolation may be included in DC-DC or not, depending on the overall charging station isolation strategy. EV charging stations can include energy storage systems which boosts electronic components content.

When designing DC charger, it is common to design subunits of certain power level and then to stack them for defined total output power. Solution with discrete components is preferable for subunits up to 30kW. Then DC chargers up to 150kW can be built stacking 20kW or 30kW subunits. For subunit power of 50kW and above, module solution is preferred option. Then, power of 350kW can be reached, for example, stacking 50kW or 60kW subunits. Examples of modules with topologies and power levels typically used in EV charging converters are Infineon F3L15MR12W2M1_B69 (3 level Vienna rectifier phase leg in Easy2B) and FF6MR12W2M1P_B11 (6mOhm half bridge in Easy2B)

 

 

Featured Products

SiC Modules

Image of  EBV EV Charging SiC Modules

Note: For other manufacturer options, please contact your EBV Sales office.

 

SiC MOSFETS

 

SMD THD
Supplier Part Number Rds /mOhm/ Package Supplier Part Number Rds /mOhm/

Package

1200V
ON Semi NTBG020N120SC1 20 D2PAK-7L ON Semi NTH4L020N120SC1 20 TO-247-4L
Infineon IMBG120R030M1H 30 D2PAK-7L Microchip MSC025SMA120B4 25 TO-247-4L
STM SCTHU100N120G2AG 30 HU3PAK Infineon IMZ120R030M1H 30 TO-247-4L
STM SCTH50N120-7 52 H2PAK-7 STM SCTWA50N120-4 52 HiP247-4
900V
ON Semi NTBG020N090SC1 20 D2PAK-7L ON Semi NTHL020N090SC1 20 TO-247
700V (Microchip) / 650V (other)
Microchip MSC015SMA070S 15 D3PAK Microchip MSC015SMA070B4 15 TO-247-4L
STM SCTH90N65G2V-7 18 H2PAK-7 STM SCTW90N65G2V 18 HiP247
        Infineon IMZA65R027M1H 27 TO-247-4L

Note: Device list above contains recent devices with lowest Rds, mostly in packages with Kelvin source pin. All manufacturers provide devices in classic TO-247 and there are devices in D2PAK. Also, bare die options are available. For more details contact EBV sales office.

 

SiC MOSFET Packages

All manufacturers are offering packages with Kelvin source, both in SMD and THD versions, as driving the MOSFET using Kelvin source connection significantly lower switching losses and improves controlability of devices. THD packages with Kelvin source are TO-247 4 leads and D2PAK 7 leads (ST versions called HiP247-4L and H2PAK-7 respectively).

Image of  SiC MOSFET Packages 2

Another innovative package comes from ST with top side cooling, HU3PAK. Automotive grade devices in 650V and 1200V class are already available.

Image of  SiC MOSFET Packages 3

 

SiC Diodes

Image of  SiC Diodes Diagram

Note: For specified current and packages please contact EBV Sales office.

 

SiC Diodes Packages

All manufacturers are offering devices in standard TO-247 (2-leads and 3-leads),TO-220, DPAK, D2PAK, while Microchip has devices in D3PAK. Infineon, ST Microelectronics, ON Semiconductor and WeEn are offering 650V devices in 8x8mm SMD package named ThimPAK 8x8, PowerFLAT 8x8, PQFN 88, DFN 8x8 respectively.

Image of  ThimPAK 8x8
Image of  PowerFLAT 8x8
Image of  PQFN 88
Image of  DFN 8x8

 Note: For specified current and packages please contact EBV Sales office.

 

SiC Gate Drivers

Power Integrations, SIC1182K, 8A, 1200V reinforced insulation smart driver, up to 150kHz switching frequency

Broadcom, ACPL-352J, 5A reinforced insulation smart gate driver
Broadcom, ACPL-W349, 3A, reinforced insulation basic gate driver
Infineon, 1ED3890MU12M, 9A, 1200V isolated driver with I2C configuration, diagnostics and DESAT

ON Semiconductor, NCP51705, 6A, low side, smart gate driver

STM, STGAP2SC, 4A, 1700V, 80ns propagation delay, Miller clamp basic gate driver
Power Integrations, 1SC2060P, 1700V single channel integrated SCALE-2 driver core, 60A, up to 500kHz switching frequency
Power Integrations, 2SC0115T, 1200V dual channel integrated SCALE-2 driver core, 15A, available in conformal coating
Note: For full information on gate drivers portfolio please contact EBV Sales office.

 

Evaluation Boards

15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter

Image of  STDES-PFCBIDIRSTDES-PFCBIDIR reference design from ST Microelectronics is complelete solution for three-phase AC/DC and DC/AC (800 VDC to 400 VAC) applications based on a digital platform optimized for power conversion, such asSCTW35N65G2Vging stations, industrial battery chargers and UPS. The high switching frequency of the SiC MOSFETs and the multilevel structure allow nearly 99% efficiency as well as the optimization of passive power components in terms of size and cost. It contains SCTW35N65G2V, 650V, 55mOhm and  SCTW40N120G2VAG, 1200V, 75mOhm SiC devices and STGAP2SM galvanically isolated gate drivers. Control is implemented Cortex-M4 core with DSP STM32G474RE, including firmware.

 

 

 

 

 

 

 

15 kW, three-phase Vienna rectifier with low cost mixed-signal control for power factor correction

Image of  STDES-VIENNARECTSTDES-VIENNARECT reference design from ST Microelectronics represents a complete solution for high power three-phase AC/DC rectifier applications based on the Vienna topology. It features mixed-signal control, with the STNRG388A controller providing digital output voltage regulation, and dedicated analog circuitry providing high bandwidth continuous conduction mode (CCM) current regulation for maximum power quality in terms of total harmonic distortion (THD) and power factor (PF). The high switching frequency of the SiC MOSFETs (70 kHz) and the multilevel structure allow nearly 99% efficiency as well as the optimization of passive power components in terms of size and cost. It contains SCTW35N65G2V, 650V, 55mOhm driven by STGAP2SM galvanically isolated gate drivers and STPSC20H12, 1200V, 20A SiC Schottky diodes.

 

 

 

 

 

 

Evaluation Board for CoolSiC™ Easy1B half-bridge modules

Image of  EVAL-PS-E1BF12-SICEVAL-PS-E1BF12-SIC from Infineon has the purpose to enable the evaluation of the FF11MR12W1M1_B11 and FF23MR12W1M1_B11 CoolSiC™ MOSFET modules with EiceDRIVER™ 1200 V isolated gate driver 1EDI60I12AF. The evaluation board allows the performance of double-pulse measurements as well as functional tests as DC/DC converter. Therefore the board is designed as bidirectional buck-boost converter.

 

 

 

 

 

30kW Vienna 3-Phase Power Factor Correction (PFC) Reference Design

Image of  MSCSICPFC REF5The MSCSICPFC/REF5 fro Microchip is a 3-phase Vienna PFC reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications. This reference design achieves 98.6% efficiency at 30 kW output power. It contains Microchip next-generation 1200V SiC diodes and 700V SiC MOSFETs with high avalanche/repetitive Unclamped Inductive Switching (UIS). Input is 3-phase 380/400V RMS , 50 Hz or 60 Hz. Switching frequency is 140 kHz switching and output voltage is 700V DC. dsPIC33CH Digital Signal Controller (DSC) is used for digital control.

Industrial Drives

Servo Motors

Major SiC advantages such as fast switching and the ability to operate at high switching frequencies are not the characteristics desirable or allowed by an electrical machine. Thus, for drive inverter applications, system-level benefits are to be considered. Although the frequency and switching times must be kept in the same range as with IGBTs, SiC-based converters can reduce losses by up to 50% compared to those using IGBTs. Additionally, reduced switching losses and better thermal conductivity allow for very compact cooling solutions, resulting in the ability to mount the inverter directly on the motor. An integrated inverter doesn't have to use cables to supply the motor with highly dynamic PWM modulated AC power, which is very beneficial for reduced EMI radiation and lowering losses in cables. It is therefore apparent that these system benefits make SiC technology of choice for industrial general purpose and servo drives.

 

Featured Devices

Image of  Industrial Drives featured devices

 

Evaluation Boards

Evaluation board for 7.5kW motor drive

Images of  EVAL-M5-E1B1245N-SiCEVAL-M5-E1B1245N-SiC is Infineon evaluation board for motor drive applications comprising the silicon carbide sixpack power module FS45MR12W1M1_B11. Combined in a kit with one of the available MADK control board options, it demonstrates Infineon’s silicon carbide power-module technology.

 

 

 

 

 

 

Features

  • EasyPACK™ 1B 1200 V CoolSiC™ MOSFET power module FS45MR12W1M1_B11 in sixpack configuration
  • Low inductive design
  • PCB size is 259 mm x 204 mm
  • Input voltage 340 – 480 VAC
  • Overload and short-circuit hardware protection
  • Maximum 7.5 kW motor power output
  • Auxiliary power supply with 5 V


Benefits

  • MADK is optimized to GPD / Servo drives with very high fsw
  • Equipped with all assembly groups for sensorless field oriented control (FOC)
  • Overtemperature and overcurrent protection as well as short circuit protection

 

Motor Drives Evaluation Board with CoolSiC™ MOSFET in TO247 package

Image of  Infineon EVAL-M5-IMZ120R-SICInfineon EVAL-M5-IMZ120R-SIC includes a 3-phase SiC MOSFET inverter for motor drive applications. It includes IMW120R045M1, 1200 V, 45 mOhm SiC with EiceDRIVER™ 1200 V isolated gate driver 1EDI20H12AH. The board supports all CoolSiC™ MOSFETs in 3pin and 4pin TO247 packageIn. It is equipped with the M5 32-pin interface connector such as the XMC DriveCard 4400.

 

 

 

 

 

 

 

Gate Driver Evaluation Board with EiceDRIVER™ and CoolSiC™ MOSFET

Image of  Infineon EVAL-1EDC20H12AH-SICInfineon EVAL-1EDC20H12AH-SICInfineon EVAL-1EDC20H12AH-SIC gate driver evaluation board was developed to demonstrate the functionality and key features of the 1EDC20H12AH EiceDRIVER™ Gate Driver IC and the IMZ120R045M1 CoolSiC™ MOSFET. The EVAL-1EDC20H12AH-SIC uses the 1EDC20H12AH, certified according to UL 1577 (VISO= 2500 V(rms) for 1 min). The board contains two gate drivers to drive two SiC MOSFET switches in half bridge configuration.

 

Power Conversion

High Density High Power Supplies

Each power converter, whether it is server or telecom power supply, UPS, battery charger or solar converter has o goal for high efficiency. The more power processed the more heat is generated out of losses. If heat is combined with constrained space requirements than challenge is set to build compact, highly efficient power equipment. Wide Bandgap (WBG) technology enables lowering both switching and conduction losses and enabling higher switching frequencies. This leads to less effort for heat removal system and smaller magnetic components. Both lead to more compact and cooler converters. Main obstacles for WBG technologies were price, reliability and a bit more complicated driving comparing to proven Si technologies. Today, price is brought down and when including total savings on energy losses, cooling systems, passive components and space total cost of ownership is competitive to the Si in many applications. New generations of WBG devices reaches reliability of Si and proven solutions for easy driving are available.

SiC devices are well established in voltage classes from 650V to 1200V, while new devices are available in 1700V. Soon, we will see introduction of devices in 3.3kV voltage class. It is widely adopted technology in hard and resonant switching topologies and available both in discrete and module solutions. Innovative packages are introduced enabling use of all SiC technology advantages.

GaN devices are still limited to 600/650V class and targeting high density power supplies mainly. Examples are telecom and server supplies where power density is a key. This technology is still paving its road, but with reliable devices, good design support and more devices to come it is going to follow the success of SiC.

 

Featured Products

SiC MOSFETs

SMD THD
Supplier Part Number Rds /mOhm/ Package Supplier Part Number Rds /mOhm/

Package

1700V
Microchip MSC035SMA170S 45 D3PAK Microchip MSC035SMA170B4 45 TO-247-4L
        Microchip MSC035SMA170B 45 TO-247
        STM SCT20N170AG 45 HIP247
1200V
ON Semi NTBG020N120SC1 20 D2PAK-7L ON Semi NTH4L020N120SC1 20 TO-247-4L
Infineon IMBG120R030M1H 30 D2PAK-7L Microchip MSC025SMA120B4 25 TO-247-4L
STM SCTHU100N120G2AG 30 HU3PAK Infineon IMZ120R030M1H 30 TO-247-4L
STM SCTH50N120-7 52 H2PAK-7 STM SCTWA50N120-4 52 HiP247-4
900V
ON Semi NTBG020N090SC1 20 D2PAK-7L ON Semi NTHL020N090SC1 20 TO-247
700V (Microchip) / 650V (other)
STM SCTHS250N65G2AG 8 STPAK        
Microchip MSC015SMA070S 15 D3PAK Microchip MSC015SMA070B4 15 TO-247-4L
STM SCTH90N65G2V-7 18 H2PAK-7 STM SCTW90N65G2V 18 HiP247
        Infineon IMZA65R027M1H 27 TO-247-4L

Note: Device list above contains recent devices with lowest Rds, mostly in packages with Kelvin source pin. All manufacturers provide devices in classic TO-247 and there are devices in D2PAK. Also, bare die options are available. For more details contact EBV sales office.

 

SiC MOSFET Packages

All manufacturers are offering packages with Kelvin source, both in SMD and THD versions, as driving the MOSFET using Kelvin source connection significantly lower switching losses and improves controlability of devices. THD packages with Kelvin source are TO-247 4 leads and D2PAK 7 leads (ST versions called HiP247-4L and H2PAK-7 respectively).

Image of  SiC MOSFET Packages 2

The lowest Rds device comes in 650V class from ST Microelectronics in proprietary package, called STPAK. It is low inductance package with Kelvin source pin with improved thermal conductivity by sinthering.

Image of Power Conversion SiC MOSFET Packages 3

Another innovative package comes from ST with top side cooling, HU3PAK. Automotive grade devices in 650V and 1200V class are already available.

Image of  SiC MOSFET Packages 43

SiC Diodes

Image of  SiC Diodes Diagram

Note: For specified current and packages please contact EBV Sales office.

 

SiC Diodes Packages

All manufacturers are offering devices in standard TO-247 (2-leads and 3-leads),TO-220, DPAK, D2PAK, while Microchip has devices in D3PAK. Infineon, ST Microelectronics, ON Semiconductor and WeEn are offering 650V devices in 8x8mm SMD package named ThimPAK 8x8, PowerFLAT 8x8, PQFN 88, DFN 8x8 respectively.

Image of  ThimPAK 8x8
Image of  PowerFLAT 8x8
Image of  PQFN 88
Image of  DFN 8x8

Note: For specified current and packages please contact EBV Sales office.

 

SiC Modules

Power Conversion SiC Modules multiple products

Microchip, MSCSM120AM02CT6LIAG, SP6CLI low inductance module, 1200V, 2.1mOhm, 750A, half bridge
Infineon, FF2MR12KM1P, 62mm pre-appplied TIM, 1200V, 2.1mOhm, 500A, half bridge
ON Semiconductor, NXH40B120MNQ0, Q0, 1200V, 40mOhm, dual boost
Infineon, FS45MR12W1M1_B11, Easy1B, 1200V, 45mOhm, Six Pack

Note: For full information on available modules and topologies please contact EBV Sales office.

 

SiC Gate Drivers

Power Integrations, SIC1182K, 8A, 1200V reinforced insulation smart driver, up to 150kHz switching frequency
Broadcom, ACPL-352J, 5A reinforced insulation smart gate driver
Broadcom, ACPL-W349, 3A, reinforced insulation basic gate driver
Infineon, 1ED3890MU12M, 9A, 1200V isolated driver with I2C configuration, diagnostics and DESAT
ON Semiconductor, NCP51705, 6A, low side, smart gate driver
STM, STGAP2SC, 4A, 1700V, 80ns propagation delay, Miller clamp basic gate driver
Power Integrations, 1SC2060P, 1700V single channel integrated SCALE-2 driver core, 60A, up to 500kHz switching frequency
Power Integrations, 2SC0115T, 1200V dual channel integrated SCALE-2 driver core, 15A, available in conformal coating
Microchip, 2ASC-12A1HP + SP6CA1, driver core and adapter board for Microchip SP6CLI modules, digitally configurable
Microchip, 62EM1-00001, Plug'n'Play driver for MIcrochip SP6CLI modules, digitally configurable

Note: For full information on gate drivers portfolio please contact EBV Sales office.

 

GaN FETs

SMD Devices, Infineon, 600V

Rds /mOhm/ Part Number Package
70 IGO60R070D1 DSO-20-85, Bottom-side cooling
IGOT60R070D1 DSO-20-87, Top-side cooling
IGT60R070D1 HSOF-8-3, TO-leadless
IGLD60R070D1 LSON-8-1, DFN 8x8
190 IGT60R190D1S HSOF-8-3, TO-leadless
IGLD60R190D1 LSON-8-1, DFN 8x8

 

THD Devices, Nexperia, 650V

Rds /mOhm/ Part Number Package
35 GAN041-650WSB TO-247
50 GAN063-650WSA TO-247

 

GaN Gate Drivers

Broadcom, ACPL-W346, 3A reinforced insulation basic gate driver
Infineon, 1EDF5673K, functional isolation, 7ns propagation delay CoolGAN gate driver
Infineon, 1EDS5663H, reinforced isolation, 7ns propagation delay CoolGAN gate driver
ON Semiconductor, NCP51820, 2A, 1ns rise/fall time half bridge driver

 

SiC Evaluation Boards

3300W CCM bidirectional totempole PFC unit using CoolSiC™ 650V , 600V CoolMOS™ C7 and digital control with XMC™

Imag of EVAL_3K3W_TP_PFC_SICEVAL_3K3W_TP_PFC_SIC is Infineon system solution for a bridgeless totem-pole power factor corrector (PFC) with bidirectional power capability. The EVAL_3K3W_TP_PFC_SIC is enabled by Infineon’s CoolSiC™ and CoolMOS™ Superjunction power MOSFETs as well as isolated drivers and an XMC™ microcontroller. Main benefits are: efficiency close to 99%, compact form factor (72W/in3), low component count and bidirectional operation.

 

 

 

 

 

 

The modular CoolSiC™ MOSFET 1200 V in TO-247 3-/4-pin evaluation platform

Image of  Power Conversion EVAL_PS_SIC_DP_MAIN 2Image of  Power Conversion EVAL_PS_SIC_DP_MAIN 1Infineon CoolSiC™ MOSFET 1200 V evaluation platform including EiceDRIVER™ gate driver IC was developed to show the driving options of the silicon carbide CoolSiC™ MOSFET in TO247 3-pin and 4-pin. To show these options, the design was split into this motherboard (EVAL_PS_SIC_DP_MAIN) and currently, two drive cards. The modular approach was chosen to allow the platform to be expanded with new drive cards in the future. The first drive card (REF_PS_SIC_DP1) contains the EiceDRIVER™ 1EDC Compact 1EDC20I12MH with an integrated active Miller clamp preventing parasitic turn-on. The second drive card (REF_PS_SIC_DP2) includes the EiceDRIVER™ 1EDC Compact 1EDC60H12AH allowing a bipolar supply, where VCC2 is +15 V and GND2 is negative. The motherboard was designed for a maximum voltage of 800 V and a maximum pulsed current of 130 A.

 

 

 

 

15 kW, three-phase, three-level Active Front End (AFE) bidirectional converter

Image of Power Conversion STDES-PFCBIDIRSTDES-PFCBIDIR reference design from ST MicroelectronicsSCTW35N65G2V Complete solution for three-phase AC/DC and DC/AC (800 VDC to 400 VAC) applications based on a digital platform optimized for power conversion, such asSCTW35N65G2Vging stations, industrial battery chargers and UPS. The high switching frequency of the SiC MOSFETs and the multilevel structure allow nearly 99% efficiency as well as the optimization of passive power components in terms of size and cost. It contains SCTW35N65G2V, 650V, 55mOhm and  SCTW40N120G2VAG, 1200V, 75mOhm SiC devices and STGAP2SM galvanically isolated gate drivers. Control is implemented Cortex-M4 core with DSP STM32G474RE, including firmware.

 

 

 

 

 

 

 

15 kW, three-phase Vienna rectifier with low cost mixed-signal control for power factor correction

Power Conversion STDES-VIENNARECTSTDES-VIENNARECT reference design from ST Microelectronics represents a complete solution for high power three-phase AC/DC rectifier applications based on the Vienna topology. It features mixed-signal control, with the STNRG388A controller providing digital output voltage regulation, and dedicated analog circuitry providing high bandwidth continuous conduction mode (CCM) current regulation for maximum power quality in terms of total harmonic distortion (THD) and power factor (PF). The high switching frequency of the SiC MOSFETs (70 kHz) and the multilevel structure allow nearly 99% efficiency as well as the optimization of passive power components in terms of size and cost. It contains SCTW35N65G2V, 650V, 55mOhm driven by STGAP2SM galvanically isolated gate drivers and STPSC20H12, 1200V, 20A SiC Schottky diodes.

 

 

 

 

 

 

 

 

 

 

30kW Vienna 3-Phase Power Factor Correction (PFC) Reference Design

Image of Power Conversion MSCSICPFC-REF5The MSCSICPFC/REF5 fro Microchip is a 3-phase Vienna PFC reference design for Hybrid Electric Vehicle/Electric Vehicle (HEV/EV) charger and high-power switch mode power supply applications. This reference design achieves 98.6% efficiency at 30 kW output power. It contains Microchip next-generation 1200V SiC diodes and 700V SiC MOSFETs with high avalanche/repetitive Unclamped Inductive Switching (UIS). Input is 3-phase 380/400V RMS , 50 Hz or 60 Hz. Switching frequency is 140 kHz switching and output voltage is 700V DC. dsPIC33CH Digital Signal Controller (DSC) is used for digital control.

 

 

 

 

GaN Evaluation Boards

2500W full-bridge totem-pole power factor correction evaluation board using CoolGaN™ 600V e-mode HEMT

Image of Power Conversion EVAL_2500W_PFC_GAN_AEVAL_2500W_PFC_GAN_A is Infineon 2.5kW CCM full-bridge PFC evaluation board that utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99 percent for efficiency-critical applications such as server power supplies or telecom rectifiers. The board features IGO60R070D1 CoolGaN™ 600V e-mode HEMTs, IPT65R033G7 CoolMOS™ C7 Gold superjunction MOSFET and EiceDRIVER™ gate driver ICs.

 

 

 

 

3600W, 385V to 52V LLC DC-DC demonstration board using CoolGaN™ 600V e-mode HEMT IGT60R070D1

Image of  Power Conversion EVAL_3K6W_LLC_GAN InfineonEVAL_3K6W_LLC_GAN Infineon CoolGaN™ demonstration board is a 3600W full-bridge to full-bridge LLC DC-DC converter which converts 360V to 400VDC input voltage to a regulated 52V output. The superior switching characteristics of CoolGaN™ e-mode HEMTs result in very low losses, hence high-efficiency power conversion at high switching frequencies along with very high power density. It includes high-performance CoolGaN™ 600V IGT60R070D1 70mΩ on the primary side and BSC026N08NS5 (80V, 2.6mΩ max.) as the synchronous FETs on secondary. Efficiency is greater than 98% at 50% load and greater than 97% for loads higher than 20%. Power density is 160W/in3 (box volume is calculated with excluding input and output connectors and the fan).

 

 

 

 

CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™

Image of  Power Conversion EVAL_1EDF_G1_HB_GANEVAL_1EDF_G1_HB_GAN is Infineon 600V gallium nitride (GaN) half-bridge evaluation board enables easy, rapid setup and test of CoolGaN™ transistors. The generic topology can be configured for boost or buck operation, pulse testing or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope, to measure the switching performance of CoolGaN™ transistors and gate driver. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. It includes CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1) and dedicated GaN EiceDRIVER™ (1EDF5673K).

 

 

 

 

4 kW Bridgeless Totem-pole PFC

Image of  Power Conversion NXTTP4000W066 NexperiaNXTTP4000W066 Nexperia evaluation board is a bridgeless totem-pole Power-Factor-Correction (PFC) circuit. Using Nexperia power GaN FETs a very high-efficiency single-phase AC-DC converter is realized by using a diode-free power GaN FET bridge. It is based on GAN041-650WSA, 650V, 41mOhm GaN FETs. Input voltage is 85-265VAC, 47-63Hz  with 10% short time overload: 19.8Arms.

 

 

 

 

 

3.5 kW Half-Bridge evaluation board

Image of  Power conversion NX-HB3500EV NexperiaNX-HB3500EV Nexperia evaluation board is a half-bridge converter circuit using Nexperia power GaN FETs enabling evaluation of buck or boost converter. This enables the basic study of the switching characteristics and efficiency achievable with Nexperia’s GAN063-650WSA 650 V GaN FETs. The circuit can be configured for synchronous rectification, in either buck or boost mode. Selection jumpers allow the use of a single logic input or separate high / low level inputs. The high-voltage input and output can operate at up to 400 V DC, with a power output of up to 3.5 kW. The inductor provided is intended for efficient operation at 100 kHz, however, other inductors and frequencies may be used.

 

 

 

 

 

 

 

 

 

 

 

 

 

Auxiliary Power Supplies

Auxiliary power supplies provide power to all systems needed for operation of industrial power converters. These include control logic, fans, displays etc. The main objectives for auxiliary power supplies are ease of design, robustness and compact design, being in power range typically up to 300W. In three phase systems, DC voltage bus reaches values of 600-1000V aux power supplies. Power range makes flyback topology as a good candidate, but high voltage DC bus imposes constraints in choice of switch and flyback topology. With 1700V SiC MOSFETs it is possible to implement simple, yet highly efficient snubberless flyback. More, devices in SMD packages, can be easily mounted and because of low power losses, can use PCB to remove generated heat.

On the other side, for lower power equipment operating from single phase, on the top of using highly efficient WBG switch, high level of integration in flyback topology enables even more compact solutions. InnoSwitch3 flyback converters from Power Integrations integrate 750V GaN switch with multi mode QR/CCM flyback controller, protection features, on-chip isolation feedback and secondary side controller.

 

Featured Products

1700V SiC MOSFET

Manufacturer Part Number Rds /mOhm/ Package
Infineon IMBF170R1K0M1 1000 D2PAK-7L
Infineon IMBF170R650M1 650 D2PAK-7L
Infineon IMBF170R450M1 450 D2PAK-7L
Microchip MSC750SMA170S 750 D3PAK
STM SCT1000N170 700 HiP247

 

750V GaN Integrated Flyback conveter - Power Integrations

Part Number Power 230V ac /W/
INN3678C-H60X 75
INN3679C-H60X 85
INN3670C-H60X 100

 

Evaluation Boards

62.5W auxiliary power supply for three-phase power converter

Image of  Power Conversion REF_62W_FLY_1700V_SIC from Infineon is QR flyback providing three outputs (+/- 15V, 24V) from 200-1000V DC rectified input. It reaches up to 90.56% efficiency at full load and requires no heatsink. It enables evaluation of 1700V, 1Ohm SiC in D2PAK 7L, IMBF170R1K0M1.

 

 

 

 

 

 

 

60 W Power Supply Using InnoSwitch3-EP GaN-based INN3679C-H215

Image of  Power Conversion INN3679C-H215Design demonstrates Power Integration's InnosSwitch3-EP flyback converter based on INN3679C-H215 with efficiency over 93.5% at full load. It consumes less than 30mW input power at no load condition. It uses synchronous rectification and proprietary technology for primary and secondary isolation, thus no need for optocouplers for precise output regulation.

 

Renewable Energy Generation

Solar Inverters

Even one may think of sun as indefinite source of energy, higher efficiency of power converters brings benefits to the total cost of ownership of solar equipment, by lowering system cost and increasing energy throughput per initial system investments. From traditional systems of above 100kW range in solar plants, with more installations in commercial and residential areas, solar equipment is coming down through several tents of kW to kW range. This changes the architecture of solar systems from centralized string systems to microinverters, introducing more semiconductor content. Typical architecture of solar system contains boost converter to boost voltage from solar cells to HV DC bus, optional isolated DC-DC converter for safety reasons and output inverter stage for grid connection. These building blocks are ideal for SiC devices application, taking into account specific requirements of given solar systems. Lowering overall losses eases generating heat management while boosting switching frequency lowers capacitors ripple and inductors size, both leading to more compact and lower cost system.   

For lower power solar systems, discrete SiC diodes and MOSFET solutions available, for example for hard switching boost and inverter stage. In case of higher power modules with already integrated and optimized SiC technology is optimal solution. Several modules with integrated boost topology is available, from single channel in Infineon DF11MR12W1M1P_B11, Easy1B, to three channels in ON Semiconductor NXH40B120MNQ1SNG, Q1 moodule. For output inverters, hybrid solutions are available in order to optimize price performance ratio, like Infineon F3L11MR12W2M1_B65, Easy 2B, three level ANPC topology, which utilizes IGBTs in slow switching loops and SiC MOSFETs in high switching loops.

 

Featured Products

SiC MOSFETs and Hybrid Modules

Image of  Renewable Energy Generation SiC MOSFETs and Hybrid Modules

 

SiC MOSFETS

SMD THD
Supplier Part Number Rds /mOhm/ Package Supplier Part Number Rds /mOhm/

Package

1200V
ON Semi NTBG020N120SC1 20 D2PAK-7L ON Semi NTH4L020N120SC1 20 TO-247-4L
Infineon IMBG120R030M1H 30 D2PAK-7L Microchip MSC025SMA120B4 25 TO-247-4L
STM SCTHU100N120G2AG 30 HU3PAK Infineon IMZ120R030M1H 30 TO-247-4L
STM SCTH50N120-7 52 H2PAK-7 STM SCTWA50N120-4 52 HiP247-4
900V
ON Semi NTBG020N090SC1 20 D2PAK-7L ON Semi NTHL020N090SC1 20 TO-247
700V (Microchip) / 650V (other)
Microchip MSC015SMA070S 15 D3PAK Microchip MSC015SMA070B4 15 TO-247-4L
STM SCTH90N65G2V-7 18 H2PAK-7 STM SCTW90N65G2V 18 HiP247
        Infineon IMZA65R027M1H 27 TO-247-4L

Note: Device list above contains recent devices with lowest Rds, mostly in packages with Kelvin source pin. All manufacturers provide devices in classic TO-247 and there are devices in D2PAK. Also, bare die options are available. For more details contact EBV sales office.

 

SiC MOSFET Packages

All manufacturers are offering packages with Kelvin source, both in SMD and THD versions, as driving the MOSFET using Kelvin source connection significantly lower switching losses and improves controlability of devices. THD packages with Kelvin source are TO-247 4 leads and D2PAK 7 leads (ST versions called HiP247-4L and H2PAK-7 respectively).

Image of  SiC MOSFET Packages 2

Another innovative package comes from ST with top side cooling, HU3PAK. Automotive grade devices in 650V and 1200V class are already available.

Image of  SiC MOSFET Packages 3

SiC Diodes

Image of  Renewable Energy Generation SiC Diodes Diagram

Note: For specified current and packages please contact EBV Sales office.

 

SiC Diodes Packages

All manufacturers are offering devices in standard TO-247 (2-leads and 3-leads),TO-220, DPAK, D2PAK, while Microchip has devices in D3PAK. Infineon, ST Microelectronics, ON Semiconductor and WeEn are offering 650V devices in 8x8mm SMD package named ThimPAK 8x8, PowerFLAT 8x8, PQFN 88, DFN 8x8 respectively.

Image of  ThimPAK 8x8
Image of  PowerFLAT 8x8
Image of  PQFN 88
Image of  DFN 8x8

Note: For specified current and packages please contact EBV Sales office.

 

SiC Gate Drivers

Power Integrations, SIC1182K, 8A, 1200V reinforced insulation smart driver, up to 150kHz switching frequency

Broadcom, ACPL-352J, 5A reinforced insulation smart gate driver
Broadcom, ACPL-W349, 3A, reinforced insulation basic gate driver
Infineon, 1ED3890MU12M, 9A, 1200V isolated driver with I2C configuration, diagnostics and DESAT


ON Semiconductor, NCP51705, 6A, low side, smart gate driver

STM, STGAP2SC, 4A, 1700V, 80ns propagation delay, Miller clamp basic gate driver
Power Integrations, 1SC2060P, 1700V single channel integrated SCALE-2 driver core, 60A, up to 500kHz switching frequency
Power Integrations, 2SC0115T, 1200V dual channel integrated SCALE-2 driver core, 15A, available in conformal coating

Note: For full information on gate drivers portfolio please contact EBV Sales office.

 

Vehicle Electrification

With electrification of various vehicle subsystems and particularly traction, high power electronics play key role as enabler of passenger cars and CAV changes. With high electric power installed and different subsystem needs, power conversion becomes a challenge as space is by definition constrained and weight is a key for the vehicle autonomy and contribution to emission levels. These constrains makes perfect requirements for power converters built with SiC devices. With low losses and high switching frequencies, SiC technology enables design of smaller power converters, with less heat dissipation  and smaller magnetic components.

Main subsystems, subject for SiC implementation, are On-Board Charger (OBC), HV-LV DC-DC converter and traction drive inverter. OBC are operating on three-phase systems designed for 11kW or 22kW power ranges, depending on local regulations for public power networks. They need PFC as the input stage and isolated DC-DC converter. Implementation in this power range can be efficiently done with discrete devices. Evaluation platform from ON Semiconductor SEC-3PH-11-OBC-EVB provides means for SiC devices evaluation and support faster design cycle. Traction inverters or main inverters are providing power to the wheels and therefore installed power can vary from tents of kW to hundreds of kW and more when it comes to electric hypercars and CAV. In these power ranges specialized models can be optimal solution. Even Si based IGBTs are widely adopted as a semiconductor of choice, SiC modules in standard automotive packages are ready and will take the leadership in near future, first to step in vehicles requiring performance.

Image of  Vehicle Electrification 1

Image of  Vehicle Electrification 2

Image of  Vehicle Electrification 3

For power scalability and design optimization, discrete solution still can be the option and it is much more feasible by introducing SCTHS250N65G2AG, 8mOhm SiC MOSFET in STPAK from ST Microelectronics. It is available now as 650V device, but higher voltage classes are to come. Current device can handle up to 250A of current in package using multi sintering for better thermal performance and higher reliability. Technology is field proven solution in state of the art high class electric vehicles.

Image of  Vehicle Electrification 4

Featured Devices

SiC MOSFETS

SMD THD
Supplier Part Number Rds /mOhm/ Package Supplier Part Number Rds /mOhm/

Package

1700V
        STM SCT20N170AG 86 HIP247
        STM SCT1000N170AG 1300 HIP247
1200V
ON Semi NVBG020N120SC1 20 D2PAK-7L ON Semi NVH4L020N120SC1 20 TO-247-4L
STM SCTHU100N120G2AG 30 HU3PAK Infineon AIMW120R045M1 45 TO-247
STM SCTH40N120G2V7AG 105 H2PAK-7 STM SCTW60N120G2AG 58 HiP-247
900V
ON Semi NVBG020N090SC1 20 D2PAK-7L ON Semi NVTH4L020N090SC1 20 TO-247-4
650V
STM SCTHS250N65G2AG 8 STPAK        
ON Semi NVTBG015N065SC1 15 D2PAK-7L ON Semi NVTH4L015N065SC1 15 TO-247-4L
STM SCTHU100N65G2-AG 20 HU3PAK STM SCTW100N65G2AG 26 HiP247
STM SCTH100N65G2-7AG 26 H2PAK-7        

Note: For more details and other devices options contact your EBV sales office.

 

SiC MOSFET Packages

Driving the MOSFET using Kelvin source connection significantly lower switching losses and improves controlability of devices. THD packages with Kelvin source are TO-247 4 leads and D2PAK 7 leads (ST versions called HiP247-4L and H2PAK-7 respectively).

Image of  SiC MOSFET Packages 2

The lowest Rds device comes in 650V class from ST Microelectronics in proprietary package, called STPAK. It is low inductance package with Kelvin source pin with improved thermal conductivity by sinthering.

Image of Power Conversion SiC MOSFET Packages 3

Another innovative package comes from ST with top side cooling, HU3PAK. Automotive grade devices in 650V and 1200V class are already available.

Image of  SiC MOSFET Packages 43

SiC Diodes

Image of  Vehicle Electrification SiC Diodes

Note: For specified current and packages please contact EBV Sales office.

 

Gate Drivers

Power Integrations, SIC1182KQ, 1200V reinforced isolation, 8A, smart gate driver
Broadcom, ACPL-344JT, 1200V isolated, 2.5A smart gate driver
Broadcom, ACPL-K33T, 1200V isolated, 2.5A, basic gate driver
ST Micorelectronics, STGAP1AS, 1200V isolated, 5A, smart gate driver
ON Semiconductor, NCV51705, low side, 6A, smart gate driver

 

Evaluation Boards

Three-phase On Board Charger (OBC) PFC-LLC platform

Image of  Vehicle Electrification SEC-3PH-11-OBC-EVBThe SEC-3PH-11-OBC-EVB from ON Semiconductor is a three-phase On Board Charger (OBC) platform achieving state-of-the-art system efficiency with AEC-Q SiC power devices and drivers. The system boasts the high performance SiC MOSFET 1200 V, 80 mΩ (NVHL080N120SC1), SiC MOSFET Gate driver 6A (NCV51705) and SiC Diode 650 V, 30 A (FFSB3065B-F085). Conceived in a modular approach and equipped with a user-friendly GUI, the kit facilitates the evaluation of the SiC devices in an OBC application. The LLC system is driven in voltage or current control modes by the embedded software. Ultimately, the platform serves as a learning environment for three-phase AC/DC power conversion. Visit the On Board Charging solutions solutions site to learn how ON Semiconductor can help you a comprehensive and advanced portfolio. Output voltage is 200-450VDC and output current up to 40A.

 

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