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Infineon Switches and Drivers

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Merging the best of SiC with Infineon’s leading MOSFET technology

CoolSiC™ trench MOSFETs 650 V for HV SMPS - maximize power usage effectiveness, save energy costs!

For those enterprises having already heavily invested in energy usage optimization, every single percentage of additional improvement with a favorable effect on their energy bills counts. For all intending to follow the power consumption increasing megatrends of the future while simultaneously moving to the top efficiency area, calculations show clearly that a switch from silicon (Si) to wide-bandgap (WBG) solutions (SiC, GaN) will be recommendable. The higher the efficiency and the higher the power density, the more WBG solutions become cost effective compared to Si. Rationale at hand, with the new CoolSiC™ trench power MOSFETs 650 V from Infineon investments in system cost will be by far lower than the achievable energy cost savings.

Infineon makes itself stand out from other semiconductor suppliers by the capability of mastering the three most relevant technologies in the industry, silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). For doing so, Infineon’s engineers must be fully aware of the differences in the technologies, of the material properties and characteristics, and of how to use the acquired knowledge to build the most valuable solutions for existing and future customers. Experience those differences in power with Infineon’s CoolMOS™ 7, CoolSiC™, and CoolGaN™ and understand their various benefits for you and your business.

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Register for free Webinar!

Infineon’s new CoolSiC™ MOSFETs 650 V – Revolution for power conversion

        Online, On Demand

        Key takeaways:

  • Gain insights into Infineon's silicon carbide approach
  • Receive an introduction to the new CoolSiC™ MOSFET 650 V family and gate-driver ICs
  • Understand how Infineon masters it all - for you (Si, SiC, and GaN)
  • Learn how Infineon can help to build better systems, easier and faster
  • Learn about potential applications for the new CoolSiC™ MOSFET 650 V portfolio





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