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Infineon Sensor and Power Solutions

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Intelligent Solutions for Smart Buildings

Create the Smart Buildings of tomorrow with Infineon sensor and power solutions

Smart Buildings are on the rise. Thanks to advancements in sensor and communication technology, buildings are becoming more and more intelligent. With a higher level of smartification, buildings increase their energy efficiency thus lowering their carbon-dioxide footprint and energy consumption. At the same time, smart buildings offer their occupants a higher level of comfort thanks to adaptive and intuitive building operations.

Smart devices are a key element for the intelligent buildings of tomorrow. Thanks to sensor technology, building equipment such as HVAC devices become smart enough to be able to monitor their condition. Infineon’s range of XENSIV™ sensors including pressure sensors, MEMS microphones, current sensors, 3D magnetic sensors along others together with its XMC™ product portfolio enables condition monitoring and predictive maintenance features.

Additionally, these sensors can be used for room automation. Together with Infineon’s XENSIV™ radar chip, the presence and number of people can be detected to adjust operations of lighting, HVAC devices and other domains in a building automatically.  

A reliable and power-efficient information and telecommunications technology (ICT) infrastructure is crucial to enable these smart features. With Power over Ethernet (PoE), power and connectivity can be provided to smart devices inside the building via one single twisted-pair Ethernet cable.

Thanks to the latest IEEE 802.3bt PoE standard, up to 100 W per port is available from PoE Power Sourcing Equipment (PSE) that opens the door for many new PoE applications on the Powered Device (PD) side. At the same time, it creates new challenges for the power design of the PoE equipment. Now, even under wide-load conditions highest power efficiency is requested. Thanks to Infineon’s portfolio of efficient high and low power semiconductors like the CoolMOS™ or OptiMOS™ family, these challenges can be addressed.

 

Learn more about Infineon’s solution for Smart Building and Predictive Maintenance or get more information about Power over Ethernet

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The future of buildings

Learn more about Infineon’s solution for Smart Buildings

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No smart building without predictive maintenance

Download the solution teaser and explore Predictive Maintenance

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With intelligence comes power

Download the technical article and read how Power over Ethernet (PoE) enables smarter buildings

 PoE Technical Article

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Product Highlights

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XENSIV™ 24 GHz radar sensor & Infineon's Sensor2GoL Pulse Board

Image of Infineon Xensiv BGT24LTR11

BGT24LTR11 is a silicon germanium radar MMIC for signal generation and reception, operating in the 24.0 GHz to 24.25 GHz ISM band. It is based on a 24 GHz fundamental voltage controlled oscillator (VCO).

  • 24 GHz transceiver MMIC
  • Fully integrated low phase noise VCO
  • Built in temperature compensation circuit for VCO stabilization
  • Low power consumption
  • Fully ESD protected device
  • Single ended RF and IF terminals

 

Download Datasheet

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Image of Infineon Sense2GoL PULSE Board

Related tool

DEMO SENSE2GOL PULSE

XENSIV™ 24GHz radar sensor development kit utilizing BGT24LTR11 RF transceiver and XMC4700 32-bit ARM® Cortex®-M4

Infineon low power radar demo board based on the BGT24LTR11 for speed and direction of movement detection using Doppler operation in a pulsed mode.

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XENSIV™ barometric pressure sensor DPS368 & Infineon’s Shield2Go

Image of Infineon Xensiv DPS368

The DPS368 is a digital, waterproof barometric air pressure sensor for air flow and height measurement. It’s fully functional after immersion in water at a depth of 50 meters for 1 hour (IPx8 certified).

  • Small package size 8-pin LGA, 2.0 x 2.5 x 1.1 mm³ and ¼ smaller noise
  • High precision ± 0.002 hPa (or ±0.02 m) and accuracy ± 0.06 hPa (or ±0.5 m)
  • Abs. accuracy: ± 1 hPa (or ±8 m) with operation rage
  • Pressure: 300–1200 hPa
  • Temperature: -40–85 °C
  • Smallest IPx8-certified (waterproof) and robust pressure sensor on the market

 

Download Datasheet

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Image of Infineon Xensiv S2GO-PRESSURE-DPS368

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S2GO PRESSURE DPS368

Infineon’s Shield2Go boards offer a unique customer and evaluation experience – the boards are equipped with one DPS368 barometric pressure sensor and come with a ready to use Arduino library. Customers can now develop their own system solutions by combining Shield2Go boards together with Infineon My IoT adapters.  

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XENSIV™ MEMS microphones

Image of Infineon Xensiv IM69D130

IM69D130 is a high performance digital MEMS microphone making use of Infineon’s Dual Backplate MEMS technology to deliver 105dB dynamic range and high output linearity up to 130dBSPL.
 

  • 69 dB(A) signal-to-noise ratio
  • Below 1 percent distortions at 128 dBSPL (AOP - 130 dBSPL)
  • Digital (PDM) interface with 6 μs group delay at 1 kHz
  • Tight sensitivity (-36 ±1 dB) and phase (± 2 deg) tolerances
  • 28 Hz low frequency roll-off
  • No analog components required

 

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XENSIV™ current sensor

Image of Infineon Xensiv TLI4971

The TLI4971 is a new high precision miniature coreless magnetic current sensor for AC and DC measurements with analog interface and dual fast over-current detection outputs. Infineon's well-established and robust Hall technology enables accurate and highly linear measurement of currents with a full measurement range up to ±120 A.

  • SMD package with very small form factor, 8x8mm, easy integration and board area saving
  • Single supply voltage, 3.1 V to 3.5 V
  • Highly accurate, scalable, DC & AC current sensing
  • Bandwidth greater than 120 kHz enables wide range of applications
  • Excellent stability of offset over temperature and lifetime
  • High robustness to voltage slew rates up to 10 V/ns

 

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XENSIV™ 3D magnetic sensor

Image of Infineon Xensiv 3D-Sensor

Infineon´s TLI493D-A2B6 is designed for all kinds of sensing applications, especially in the industrial area such as multifunction knobs or white good applications. It measures the magnetic field in X, Y and Z direction. Each X-, Y- and Z-Hall probe is connected sequentially to a multiplexer, which is then connected to an Analog to Digital Converter (ADC). 

  • 3D magnetic flux density sensing of ±160 mT
  • Programmable flux resolution down to 65 µT (typ.)
  • X-Y angular measurement mode
  • Power down mode with 7 nA (typ) power consumption
  • 12-bit data resolution for each measurement direction plus 10-bit temperature sensor
  • Triggering by external µC possible via I2C protocol

 

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XMC™ microcontroller based on ARM Cortex-M4 processor core

Image of Infineon XMC4700

The XMC4700 belongs to XMC4000 family of microcontrollers based on the ARM Cortex-M4 processor core. The growing complexity of today's energy efficient embedded control applications are demanding microcontroller solutions with higher performance CPU cores featuring DSP and FPU capabilities. The XMC4700 family of microcontrollers take advantage of Infineon's decades of experience in the industrial market to provide an optimized solution to meet the performance challenges of todays embedded control applications.

  • ARM ® Cortex ®-M4 @ 144MHz
  • 2048kB Flash, 352kB RAM
  • Data and IP Protection on Flash
  • Supply voltage range: 3.13 - 3.63 V
  • Temperature range: -40 – 125 °C
  • Safety package supporting SIL-2/3

 

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OptiMOS™ 5 100 V-150 V

Image of Infineon TO-220

Infineon’s new OptiMOS™ 5 150 V power offer a breakthrough reduction in RDS(on) (up to 25% compared to the next best alternative in SuperSO8) and Qrr without compromising FOMgd and FOMOSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (lowest Qrr in SuperSO8 = 26 nC) increases commutation ruggedness.

  • Lower RDS(on) without compromising FOMgd and FOMOSS
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

 

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600 V CoolMOS™ P7

Image of Infineon CoolMos 600V P7

600 V CoolMOS™ P7 SJ MOSFETs offer highest efficiency and improved power density due to the significantly reduced Qg and Eoss levels, as well as optimized RDS(on) to a broad variety of applications, ranging from low power SMPS up to the highest power levels. The integrated gate resistors enable very low ringing tendency, and, thanks to its robust body diode for hard commutation, it is suitable for hard, as well as so switching topologies, like LLC.

  • Suitable for hard and so switching (PFC and LLC) due to an outstanding commutation ruggedness
  • Optimized balance between efficiency and ease-of-use
  • Significant reduction of switching and conduction losses leading to low MOSFET temperature
  • Excellent ESD robustness >2 kV (HBM) for all products
  • Better RDS(on)/package products compared to competition
  • Large portfolio with granular RDS(on) selection qualified for a variety of industrial and consumer applications

 

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