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Infineon’s expertise for drives

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Infineon industrial drives

We drive efficiency in drives – Infineon’s expertise for your optimal drive systems

Electric motors have shaped the world and continue to do so, at every level. Around 50% of the world-wide consumed electrical energy is used for industrial drive systems. Major applications are pumps, fans and compressors.

With increased awareness of the cost of energy, both in its environmental and financial terms, the need for higher levels of efficiency in the way we utilize electricity to drive motors becomes more apparent. High energy saving is possible with process optimization enabled by speed and torque control of the motor drive systems for electrical motors.

Infineon offers optimized technologies like IGBT7 that perfectly match to the needs of drives applications like overload and switching speed control. SiC MOSFETs enable a high degree of integration due to low losses.

Infineon has a unique one shop offering for industrial drives. The right fit package for the inverter in power range from W with IPM’s and 100’s of kW with EconoDUAL. Furthermore we provide gate driver solutions with enhanced functionalities, current sense solutions, peripherals like industrial interface IC’s, security solutions and microcontrollers.

Therefore Infineon is the right partner for customized solutions and high volume products with outstanding quality standards and production capability.


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Image of TRENCHSTOP IGBT7 Easy 1B productThe 1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly reduced losses and offer a high level of controllability. The chip is specially optimized for industrial drives applications, which means much lower static losses, higher power density and softer switching. Additionally, by raising the allowed maximum operation temperature up to 175 °C in the power module, a significant increase of power density can be obtained.



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Image of CoolSiC MOSFET Easy 2B productBased on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs. In comparison to traditional Silicon based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) MOSFET offers a series of advantages. CoolSiC™ MOSFET first products in 1200 V target photovoltaic inverters, battery charging and energy storage. Silicon Carbide CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers. Silicon Carbide (SiC) opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.



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Image of CIPOS Maxi productCIPOS™ Maxi 1200 V, 10 A three-phase IGBT based intelligent power module with open emitter in DIP 36x23D package providing fully-featured compact inverter solution with excellent thermal conduction for motor drive applications including industrial drives, fans and pumps, HVAC, active filters, and etc.




Check out the following related parts:

  • IM818-MCC – CIPOS™ Maxi 1200 V, 10 A three-phase intelligent power module

Image of 1ED44176N01F productEiceDRIVER™ galvanically isolated gate drivers use the magnetically-coupled coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer functional, basic and reinforced isolated, UL 1577 and VDE 0884 certified products. The isolation allows very large voltage swings (e.g. ±1200 V).

Our silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique, measurable and best-in-class advantages, including integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Check out the following related parts:

  • 1ED44176N01F – 25 V, 1.75 A – Single low side driver with OCP
  • 1ED020I12-F2 – 1200 V, 2 A – Isolated driver with DESAT and Miller clamp
  • 1EDC60H12AH – 1200 V, 10 A – Isolated driver with separate output
  • 1EDI30I12MF – 1200 V, 6 A – Isolated driver with Miller clamp

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Overview of Infineon’s CoolSiC™ MOSFETs



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We drive efficiency in drives. Our expertise for your optimal drive systems