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EBV and Infineon - Gate driver ICs

EBV - Gate driver solutions - EV- Charging Long Copy (LC)

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Infineon’s portfolio of top quality semiconductors feature highly-efficient products with high power density, perfect for DC EV internal power supplies or for a complete DC EV charging solution. Configurable half-bridge and three-phase gate driver ICs can be combined with powerful Infineon MOSFETs to provide the power and efficiency these applications require.

EBV - Gate driver solutions - EV- Charging Table

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EV charger Recommended gate driver ICs Voltage class [V] Configuration Source/Sink Current typ. [A] Package Features

DC-DC

1EDC20I12AH

1200

Single high-side

4/3.5

DSO-8 300 mil

  • 8 mm creepage clearance
    UL 1577 certified with VISO = 2500 V(rms) for 1 min
  • Separate source and sink outputs
  • Short circuit clamping
  • Active shutdown

HB (LLC)

1EDC60I12AH

1200

Single high-side

10/9.4

DSO-8 300 mil

PFC

 

IR4427S

25

Dual low-side

1.5/1.5

DSO-8

  • Gate drive supply range from 6 to 20 V
  • Matched propagation delay for both channels 

2EDN7524F

20

Dual low-side

5/5

DSO-8

  • Dual-channel low-side
  • 5 A source / 5 A sink
  • High system level efficiencies, excellent power density and consistent system robustness
  • Rail-to-rail output stages
  • Low ohmic output stages
  • 19 ns propagation delay

Sync-Buck

IR2010S

200

High-side + Low-side

3/3

DSO-16 300mil

  • Shut down input turns off both channels
  • Undervoltage lockout for both channels

EBV - Gate driver solutions - Diagram (LC)

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Application diagram

 

DC EV-Charging diagram

Win an eval board!

The EVAL-1EDC20H12AH-SIC is developed to demonstrate 1EDC20H12AH is the perfect driver for CoolSiC™ MOSFET IZM120R045M1.

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