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Infineon's CoolGaN™ family

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CoolGaN™ – new paradigm for high power SMPS

Infineon, leader in power, builds on gallium nitride for ultimate efficiency and reliability

Enter a new era of efficiency with Infineon


Emerging from the newly developed gallium nitride-on-silicon process (GaN-on-Si), Infineon's CoolGaN™ family of HEMT devices significantly increases efficiencies in power conversion, improves power density and reduces the overall financial and environmental impact of power management compared to currently available solutions. Operation at higher switching frequencies with CoolGaN™ - while keeping losses to a very low, manageable level - represents a beneficial advantage. GaN's zero reverse-recovery charge enables topologies (i.e., full-bridge totem-pole PFC) so far not considered for power supplies. Creating HEMT power devices based on GaN-on-Si, per se, is a game-changing innovation. Infineon tops it by delivering in addition the perfectly matching GaN EiceDRIVER™ series of single-channel functional and reinforced isolated gate driver ICs.

Infineon is in the unique position to fully own the entire supply chain (incl. a high-volume fab for economies of scale), now mastering all currently available semiconductor technologies (Si, SiC, GaN, GaN-on-Si). Customers receive unbiased consultancy and offers tailored to their needs and their application profiles.

Targeting: high-power SMPS applications (industrial, telecom, hyperscale datacenters, server)    

High-efficiency GaN switched-mode power supply (SMPS)

 

Image of 1EDi-G1 GaN Driver IC DIAGRAM


Click here to enlarge image

 


Full-bridge totem-pole PFC

  High-voltage CoolGaN™  

  CoolGaN™ 600 V

  High-voltage SJ MOSFETs

 
  CoolMOS™ C7/G7


Controller / Driver

 
  PFC controller

 

  

  LLC controller

  Single-channel isolated gate driver

 

 
  Dual-channel isolated gate driver

 

 
  Related documents

 

 


Resonant LLC

 

  High-voltage CoolGaN™

 

  CoolGaN™ 600 V

 


Synchronous rectification

 

  Low -voltage MOSFETs

 

 

  OptiMOS™ 5

 

GaN’s switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in3 for 3.6 kW LLC with >98% efficiency).

The CoolGaN™ portfolio is built around high performing bottom- and top-side cooling SMD packages supporting high-frequency operations. Lower parasitics and good thermal performance guarantee to fully exploit the benefits of GaN.

Watch video: hyper-scale computing enabled by Infineon

The CoolGaN™ concept has been designed for industrial applications (15+ years) and supports AC-DC, DC-DC and DC-AC conversion

 


Key features


Key benefits

 
  • Best FOM of 600-V-power devices
  • Excellent for hard- and soft-switching topologies, and for high-frequency and high-power-density applications
  • Optimized for turn-on and turn-off
  • Zero reverse-recovery charge
  • The cutting-edge technology for innovative solutions and high volumes
  • Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22) (excl. IGT60R190D1S)

 

  Compared to Si technology:

  • 10x higher breakdown field and 2x higher mobility
  • 10x lower output charge
  • 10x lower gate charge and linear Coss characteristic
     
 
  • Highest efficiency for SMPS; excellent efficiency in resonant circuits
  • Highest power density enables small and light weight designs
  • SMD packaging ensures that switching capabilities of GaN are fully accessed
  • Easy to use thanks to a compelling GaN EiceDRIVER™ gate driver IC portfolio for outstanding robustness and efficiency
  • Very low RDS(on) and large cost-down potential
  • New topologies and current modulation
  • Ultrafast (nearly lossless) switching
  • Reduced EMI
  • High-quality volume supply that enables faster time-to-market
  • Reduced BOM and overall system cost


CoolGaN™ 600 V e-mode HEMTs product portfolio
 

RDS(on) max.


DSO-20-85
Bottom-side cooling


DSO-20-87
Top-side cooling


HSOF-8-3
(TO-leadless)


LSON-8-1
(DFN 8x8)


  35 mΩ
 
       
 
70 mΩ
 
  IGO60R070D1**   IGOT60R070D1**   IGT60R070D1**   IGLD60R070D1**
 
190 mΩ
 
       IGT60R190D1S*   IGLD60R190D1**

* Standard grade, ** Industrial grade
Highlight: the newly launched IGLD60R190D1, a CoolGaN™ 600 V e-mode power transistor, comes in the smallest (8x8 mm) package within Infineon's GaN portfolio and is suitable for a broad power range. Being a match for multiple consumer and industrial applications, the optimized cost significantly lowers the technology entry barrier.

 

 

Driving enhancement mode GaN HEMTs, such as CoolGaN™, with non-isolated gate (diode input characteristic) and low threshold voltage, is different from driving Superjunction MOSFETs. Infineon’s dedicated GaN EiceDRIVER™ family of single-channel galvanically-isolated gate driver ICs with high gate current for fast turn-on and robust gate-drive topology optimizes the performance of CoolGaN™ devices. Additionally, driver complexity was significantly reduced (medium effort for design-in) and ease-of-use of the accompanied e-mode GaN HEMTs is ensured.

 


Key features


Key benefits

 
  • Output impedance:
  • RDS(on) source - 0.85 Ω
  • RDS(on) sink - 0.35 Ω
  • Input-output propagation delay accuracy: -6 ns / +7 ns
  • CMTI: > 150 V/ns
  • Galvanic isolation​
  • Package:
  • 1EDF5673K: 13-pin LGA 5x5 mm
  • 1EDF5673F: 16-pin DSO 150 mil
  • 1EDS5663H: 16-pin DSO 300 mil
  • Placement:
  • Totem-pole PFC
  • Resonant LLC
  • Pace: 18 ns minimum output pulse-width
  • Precision: 13 ns propagation delay window
  • Negative gate-drive voltage for the 1st pulse

 

  • Complete support of all requirements specific to enhancement GaN HEMTs’ operation
  • Switching behavior independent from the duty cycle
  • Negative gate-driver voltage -> protection against spurious turn-on
  • Two off-voltage levels -> least dead-time losses
  • Excellent timing accuracy -> best system efficiency
  • Constant switching transients -> least R&D effort
  • Best robustness
  • Integrated galvanic isolation for
  • high power density of the application design
  • excellent system-level timing accuracy
  • robust common-mode transient immunity (CMTI)
  • Reduced driver complexity and no need for customized drivers



High-voltage GaN driving

Image of High voltage GaN driving


GaN EiceDRIVER™ gate driver IC product portfolio

 

 


Input to output isolation
 

 
 

Package

 

Isolation class

Rating

Surge testing

Certification

Propagation delay accuracy

Typ. high level (sourcing) output resistance

Typ. low level (sinking) output resistance

 

1EDF5673K


13-pin LGA 5x5 mm


functional

VIO = 1.5kVDC

n.a.

n.a.

-6 ns /+7 ns

0.85 Ohm

0.35 Ohm

 

1EDF5673F


13-pin LGA 5x5 mm


functional

VIO = 1.5kVDC

n.a.

n.a.

-6 ns /+7 ns

0.85 Ohm

0.35 Ohm

 

1EDS5663H


13-pin LGA 5x5 mm


functional

VIO = 1.5kVDC

n.a.

n.a.

-6 ns /+7 ns

0.85 Ohm

0.35 Ohm

Simulation model for Infineon’s GaN e-mode HEMTS

Use the simulation model for a performance pre-evaluation of the following e-mode CoolGaN™ 600 V transistors: IGOT60R070D1, IGO60R070D1, IGT60R070D1, IGLD60R070D1, IGT60R190D1S

Trainings for power electronic engineers and designers

Training 1: Online course CoolGaN™ 600 V transistors
Training 2: Online course CoolGaN™ reliability and qualification basics
Training 3: Online course Si, SiC, GaN choose the right technology for different topologies
Training 4: Online course CoolGaN™ power transistors: Why are they used, where and when

Evaluation boards

 


Image
 

Board name key components

Description target applications

Key features & benefits

Image of EVAL_2500W_PFC_GAN_A board

 

 

Application note!

Study design guide

Interactive 3D model


EVAL_2500W_PFC_GAN_A

 

2500 W full-bridge totem-pole power factor correction (PFC) evaluation board

 

Infineon board components:


This 2.5 kW CCM full-bridge PFC evaluation board utilizes the advantages of Infineon’s CoolGaN™ technology to boost system efficiency above 99% for efficiency-critical applications such as server power supplies or telecom rectifiers.

 

The input voltage range of the board is between 90 to 265 VAC, while the output voltage is 390 VDC. All power components are surface mount devices (SMD) enabling faster and cheaper assembly process.

 

Target applications: SMPS, server PSU and telecom rectifiers

Features:

  • Flat efficiency >99% over a wide load range

 

Benefits:

  • Suitable reference design for high-efficiency, high-power density server PSU and telecom rectifiers
  • Highest efficiency with similar system BOM costs as of the next best Si-based alternatives for PFC topologies

Image of EVAL_HB_BC_1EDN8550 board
 

 

 

Application note!

Interactive 3D model

 

EVAL_1EDF_G1_HB_GAN

 

CoolGaN™ 600 V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™

 

Infineon board components:


The board features a half-bridge of 70 mΩ GaN power transistors, and a pair of EiceDRIVER™ GaN gate drivers along with input logic that provides adjustable dead-time. Using an external inductor, the board can be configured for buck- or boost-mode, double-pulse testing or continuous PWM operation, hard- or soft-switching. Operating frequency can be up to several MHz. Power electronic engineers and designers may investigate similarities and differences of GaN power transistors compared to their silicon counterparts.

 

Target application: evaluation of GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications

Features:

  • Simple GaN half-bridge with dedicated GaN driver ICs
  • Capable of multi-MHz switching frequencies
  • Zero reverse-recovery – can shift between hard or soft-switching
  • GaN transistors feature top-side cooling for high power dissipation
  • Qualification: industrial

 

Benefits:

  • Easy setup and use
  • Multiple configurations possible
  • Evaluate high-frequency capabilities of GaN
  • Evaluate waveforms with low ringing, overshoot and EMI
  • Enables easy evaluation at multi-kilowatt power levels

 

 

 


  Related documents

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