600 V industrial drives
- Compact module design
- Configuration flexibility
- Reliable mounting system
- High reliability and quality
- PCB layout-friendly
- Fast mounting owing to PressFIT
- Available with TIM
EasyPIM™ and EasyPACK™ families
Easy family portfolio with its EasyPIM™ and EasyPACK™ configurations covers the full power range from IC 10 A up to 50 A in 600 V with IGBT3. This series comes in the Easy1B and Easy2B housing. The screw clamp provides a fast, reliable mounting concept.
EasyPIM™ 3-phase - 600 V
600 V PIM IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode, NTC and PressFIT Contact Technology
EasyPACK™ Sixpack - 600 V
EasyPACK™ 1B 600 V sixpack IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode, NTC and PressFIT Contact Technology
Thermal Interface Material (TIM)
With the ongoing increase of power densities in power electronics, the thermal interface between power module and heatsink becomes a larger challenge. TIM does not only provides the lowest thermal resistance, but it also fulfills the highest quality standards given for power modules to achieve the longest lifetime and highest system reliability. TIM has been developed to fit to most of Infineon’s existing power module packages as well as to upcoming future designs. Using modules with preapplied TIM results in the reproducible thermal performance of power electronic applications.
- Best-in-class thermal resistance
- Pre-applied to power modules
- Increased system reliability
- Optimized thermal management
- Reduced process time in manufacturing
Discrete IGBTs for motor control and drives
600 V TRENCHSTOP™ Performance IGBT
The 600 V TRENCHSTOP™ Performance series is a new high efficiency and price-competitive IGBT, combining the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behaviour. It enables higher efficiency in motor control, air conditioning compressors, HVAC motor drives, and other power conversion applications working up to 30 kHz in hard-switching topologies.
- Better performance: lower switching losses, lower diode recovery losses
- Low speed dV/dt switching (<5 V/ns),
- Easy design
- 5us SC rating
- Low EMI
High power density 1200 V IGBT in TO-247PLUS
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200 V discrete IGBT
Providing bigger active chip area, the TO-247 PLUS allows up to 75 A 1200 V IGBT combined with 75 A diode in TO-247 footprint.
Higher current allows the upgrade of the available TO-247 3pin designs to higher power levels, reducing paralleling or improving system thermal management.
- High power density
- 20% lower Rth(jh) compared to TO-247 3pin
- Extended collector-emitter pin creepage of 4.25 mm
- Extended clip creepage due to fully encapsulated front side of the package