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CoolSiC™ / CoolMOS™ / discrete IGBTs

For different DC charging systems and power levels Infineon offers solutions with either modules or discrete IGBTs.

For chargers from 50 kW to 350 kW Infineon recommends solutions using the CoolSiC™ Easy Modules for the Vienna rectifier in the PFC stage but also in the converter stage in the DCDC stage.

The CoolSiC™ MOSFET offers a series of advantages: These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.

Product family


Product name Benefits
  EasyDUAL™ 2B with CoolSiC™ MOSFET   FF6MR12W2M1_B11


  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher-frequency operation
  • Reduced system costs
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation  


  EasyDUAL™ 1B with CoolSiC™ MOSFET   FF11MR12W1M1_B11


If you are designing a charger solution in the 30 kW to 150 kW power range discrete devices are typically used.

Product family


Product name Benefits


  • Best-in-class efficiency, resulting in lower junction and case temperatures
  • Higher device reliability
  • 50 V increase in the bus voltage without compromising on reliability
  • Designs with higher power densities 


  CoolSiC™ Schottky Diode 



  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families








  • Best fit efficiency for EV charging applications


  CoolMOS™ P7   IPW60R037P7


  • Enabling higher power densities
  • Highest reliability levels
  • The right RDS(ON) package combination can be selected 


  CoolMOS™ CFD7   IPW60R018CFD7


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