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Infineon CoolSiC™ MOSFET technology

Revolution to rely on

 

Infineon CoolSiC™ Mosfet technologyAs the market trends for EV chargers goes to small and light charging stations providing highest performance the power electronics are required to enable higher efficiency through high switching frequencies and high power density. Furthermore energy-efficiency is the key to compact DC EV charger designs because if the high-performance charger is not adequately cooled, it could potentially overheat.

Based on the requirements for the DC EV Charging, Infineon recommends the recently launched CoolSiC™ MOSFET technology that enables radically new product designs and never before seen levels of efficiency and reliability become possible.

The CoolSiC™ MOSFET offers a series of advantages: These include, the lowest gate charge and device capacitance levels seen in 1200V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.

All this results in a robust CoolSiC™ MOSFET, ideal for hard- and resonant-switching topologies, which can be driven like an IGBT using standard drivers. Delivering the highest level efficiency at switching frequencies unreachable by Si based switches allowing for system size reduction, power density increases and high lifetime reliability.

Booster and half bridge with NTC

We are presenting the lead products based on the CoolSiC™ Mosfet technology:

EasyDUAL™ 1B 1200 V / 11 and 23 mΩ halfbridge modules with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology and the Easy 1B 1200 V / 11 and 23 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology.

Key features

  • Low device capacitances
  • Temperature independent switching losses
  • Intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics

Benefits

  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation

Application examples

  • EV Charger
  • Photovoltaic Inverter
  • UPS
  • Energy storage
  • Battery Charging

 

Part number Configuration RDS(on) VDS
DF11MR12W1M1_B11 Booster with NTC 11mΩ 1200V
DF23MR12W1M1_B11 Booster with NTC 23mΩ 1200V
FF11MR12W1M1_B11 Half bridge with NTC 11mΩ 1200V
FF23MR12W1M1_B11  Half bridge with NTC 23mΩ 1200V

Infineon DC EV Charging CoolSiC Brochure Grid Box Light (DN)

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Infineon Technologies

CoolSiC™ Brochure

“CoolSiC™ - Revolution to rely on” – Product Brochure

Infineon DC EV Charging Webinar Grid Box Light (WOD)

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Infineon Technologies

Webinar

CoolSiC™ MOSFET - a step towards an energy-smart world

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