EBV - Infineon Switches and Drivers - Gallium Nitride Technology (LC)

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Switches & drivers based on Gallium nitride technology

CoolGaN™ 600 V e-mode HEMTs - highest efficiency & density levels in SMPS

With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor-made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application-based qualification approach extends beyond that of other GaN products in the market.

The e-mode (normally-off) concept is a single-chip solution and hence facilitates further integration either on the chip or package level. Infineon brought its e-mode concept to the maturity, required for demanding applications, delivering at the same time the highest performance among all available GaN HEMTs.

GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. This enables more efficient operation at existing frequencies, and much higher frequency operation which can improve power density by shrinking the size of passive components. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in3 for 3.6 kW LLC with >98% efficiency).

Image of Gallium Nitride Technology diagramThe CoolGaN™ portfolio is built around high performing SMD packages with lower parasitics and good thermal performance to fully exploit the benefits of GaN both, for bottom-side cooling (DSO-20-85) and top-side cooling (DSO-20-87). By offering a full SMD package series Infineon aims to support high frequency operations.

Infineon’s qualification plan for its GaN switches follows a dedicated approach well beyond Si standards (e.g. JEDEC), thereby setting the next level of wide bandgap quality. Application profiles (including most stringent and challenging applications requiring more than 15 years lifetime, e.g. server / telecom) are an integral part of the qualification. Failure models – based on accelerated test conditions – ensure that in the field a target lifetime and quality are met.

Target applications: servers, data centers, telecom, wireless charging, chargers, adapters

 

 

 

Key features Key benefits

 

  • Best FOM of 600 V power devices
  • Excellent for hard and soft switching topologies
  • Optimized for turn-on and turn-off
  • Zero reverse recovery charge
  • The cutting-edge technology for innovative solutions and high volumes


Compared to Si technology:

  • 10x higher breakdown field and 2x higher mobility
  • 10x lower output charge
  • 10x lower gate charge and linear Coss characteristic
  • Highest efficiency for SMPS; excellent efficiency in resonant circuits
  • Highest power density enables small and light designs
  • Surface mount (SMD) packaging ensures that switching capabilities of GaN are fully accessed
  • Easy-to-use thanks to a compelling driver IC portfolio
  • Very low RDS(on) and large cost-down potential
  • New topologies and current modulation
  • Fast (and nearly lossless) switching


CoolGaN™ 600 V e-mode HEMTs product portfolio

RDS(on) max.

DSO-20-85
Bottom-side cooling

DSO-20-87
Top-side cooling

HSOF-8-3
(TO-leadless)

DFN 8x8
35 mΩ IGO60R035D1** IGOT60R035D1** IGT60R035D1**  
70 mΩ IGO60R070D1
Download Datasheet
IGOT60R070D1
Download Datasheet
IGT60R070D1
Download Datasheet
IGLD60R070D1
Download Datasheet
190 mΩ     IGT60R190D1S*
Download Datasheet
IGLD60R190D1**
 
    IGT60R190D1**  
340 mΩ       IGLD60R340D1**

* Standard grade
** Coming soon


GaN EiceDRIVER™ ICs - 1-channel galvanically-isolated gate drivers for enhancement mode GaN HEMTs

EBV - Infineon Switches and Drivers- GaN EiceDRIVER ICs (MM)

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Every high-voltage GaN switch needs a dedicated driver IC to benefit from:

  • negative gate-driver voltage -> protection against spurious turn-on
  • two off-voltage levels -> least dead-time losses
  • excellent timing accuracy -> best system efficiency
  • constant switching transients -> least R&D effort
  • best robustness


Infineon’s newly launched CoolGaN™ switches portfolio is easy-to-use thanks to a perfectly matching gate driver IC portfolio. By introducing the GaN EiceDRIVER™ family Infineon extends its range of one-channel galvanically-isolated gate driver ICs. The new components with high gate current for fast turn-on and robust gate-drive topology have been developed to optimize the performance of enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage. Resulting, driver complexity has been significantly reduced (medium effort for design-in) as no more customized drivers are needed.

Target applications: high-voltage bridgeless totem-pole PFC stages and high-voltage resonant LLC stages in telecom and server SMPS, data centers, active clamping flybacks in AC adapters, chargers, three-phase motor drives, Class E wireless charging, Class D audio amplifiers

EBV - Infineon Switches and Drivers- GaN EiceDRIVER™ ICs Table

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Key features

Key benefits

 

  • Isolated gate-driving
  • Output impedance:
  • RDS(on) source - 0.85 Ω
  • RDS(on) sink - 0.35 Ω
  • Input-output propagation delay accuracy: +/- 5 ns
  • CMTI: > 150 V/ns
  • Package:
  • 1EDF5673K: 5x5 mm LGA 13-pin
  • 1EDF5673F: 16-pin DSO 150 mil
  • 1EDS5663H: 300 mil DSO 16-pin
  • Placement:
  • Totem-pole PFC
  • Resonant LLC
  • Pace: 18 ns minimum output pulse-width
  • Precision: 13 ns propagation delay window
  • Negative gate drive voltage for the 1st pulse
  • Complete support of all requirements specific to enhancement GaN HEMTs operation
  • Switching behavior independent from duty cycle
  • Integrated galvanic isolation for
  • High power density of the application design
  • Excellent system-level timing accuracy
  • Robust common mode transient immunity (CMTI)

EBV- Infineon Switches and Drivers - 1EDF5673 and 1EDS5663H use case (SH)

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High-efficiency GaN switched mode power supply (SMPS) - 1EDF5673 and 1EDS5663H use case
 

Image of 1EDF5673 and 1EDS5663H use case

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GaN EiceDRIVER™ ICs product portfolio - Isolation class determines packages

EBV - Infineon Switches and Drivers - GaN EiceDRIVER Table

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      Input to output Isolation       
  Datasheets Package Isolation class Rating Surge testing Certification Propagation delay accuracy Typ. high level (sourcing) output resistance Typ. low level (sinking) output resistance
1EDF5673K 1EDF5673K Datasheet 13-pin LGA 5x5 mm functional VIO = 1.5kVDC n.a. n.a.  -6 ns /+7 ns 0.85 Ohm 0.35 Ohm
1EDF5673F 1EDF5673F Datasheet 16-pin DSO 150 mil functional VIO = 1.5kVDC n.a. n.a.  -6 ns /+7 ns 0.85 Ohm 0.35 Ohm
1EDS5663H 1EDS5663H Datasheet 16-pin DSO 300 mil reinforced VIOTM = 8 kVpk
VISO = 5.7kVrms
VISOM > 10kVpk VDE0884-10, UL1577  -6 ns /+7 ns 0.85 Ohm 0.35 Ohm

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