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ON Semiconductor NXH35C120L2C2 transfer−molded IGBT power module

The NXH35C120L2C2 is a transfer-molded power module, containing a converter and inverter circuit (without and with brake) and an NTC thermistor

ON Semiconductor NXH35C120L2C2 product image

The NXH35C120L2C2 is a transfer-molded power module, containing a converter and inverter circuit (without and with brake) and an NTC thermistor. Its transfer-molded power package construction has several advantages over traditional gel-filled power modules, allowing for better battery efficiency, more compact and higher density constructions, and improved overall system reliability.

The IGBTs and diodes are rated 1200 V and 35 A with additional modules being planned that will be released in the future.

 

Key features

  • 1200 V, 35 A Rated Converter and Inverter Circuit Power Module
  • Transfer-Molded Power Package, Enabling Efficient, Compact, and Reliable Systems
  • Converter-Inverter Circuit: With and Without Brake, Including NTC Thermistor
  • Space-saving and Compact DIP Package

 

Additional features

  • High-performance transfer-molded package with improved temperature and power cycle performance
  • 1200 V rated, high-performance IGBT and diodes
  • Integrated CIB (Converter, Inverter, Brake)
  • Lower parasitic for better efficiency
  • Integrated NTC and current sense resistor (optional)

 

Applications

  • Industrial Motor Drive
  • Pumps
  • Fans

ON Semiconductor NXH35C120L2C2 Transfer−molded IGBT | EBV Elektronik

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