New Product Introduction

Micron Technology Low Power DDR4 (LPDDR4)

Micron’s LPDDR4 - Balancing performance, power, latency and physical space

Micron Low Power DDR4 - front and back side of the chip

LPDDR are DRAM devices optimized specifically to address the power consumption issues in battery-operated applications.  It was originally developed for handsets and ultra-portables​.  Some of the reasons you would use LPDDR over other options are:

Performance: peak bandwidth 33% faster compared to DDR4

Optimization: x32 configuration offers BOM savings for certain low density applications

Power Consumption: 5 times lower power consumption in standby mode compared to standard DRAM

Space, form factor, weight: MCP (Multi chip package) and PoP (package-on-package) designs save PCB Space

 

Key features

  • Densities: 2 Gb to 128 Gb - Provides flexibility for a variety of applications
  • Configurations: x32, (2 channels, x16), x64 (4 channels, x16)
  • Core Voltages: 0.6 V, 1.1 V - Helps Reduce Power Consumption
  • Temperature Ranges: –40 ˚C to +95 ˚C IT, –40 ˚C to +105 ˚C AT, –40 ˚C to +125 ˚C UT

 

Additional features

  • Configurations: x32, (2 channels, x16), x64 (4 channels, x16)  - Enables the use of fewer components to support wide bus architectures.
  • Core Voltages: 0.6 V, 1.1 V - Helps reduce power consumption, a key advantage over standard DRAM.
  • Clock Frequencies: up to 2133 MHz - Provides high performance, high bandwidth, and low power consumption.
  • Power Consumption - Delivers low power consumption in standby and active modes, plus special mobile features to reduce power for a more efficient design (refer to datasheet for details).
  • Special Features:
    • Temperature-compensated self-refresh (TCSR) - Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
    • Partial-array self-refresh (PASR) - Reduces power by refreshing only critical data
    • Deep power-down (DPD) - Provides an ultra-low power state when data retention is not required
    • Programmable drive strength (DS) - Enables adjustment for operation in point-to-point and point-to-2-point applications
    • Programmable VOH signal level - Enables adjustment for operation in point-to-point and point-to-2-point applications
  • Temperature Ranges - Enables high performance in extreme environments:
    • –40 ˚C to +95 ˚C (IT)
    • –40 ˚C to +105 ˚C (AT)
    • –40 ˚C to +125 ˚C (UT Ultra2) 
  • Packages
    • PoP - Saves board space by enabling a Mobile LPDRAM to be stacked on top of a processor so that the two components require only one footprint on the board
    • Known good die (KGD) - Supports bare die with edge bond pads for easy stacking in SIP and MCP solutions
    • FBGA - Supports JEDEC-standard FBGA ballout

 

Applications

  • Automotive – Infotainment, ADAS, Communications, Clusters
  • Industrial – POS/Retail
  • Consumer – AR/VR, Home Automation, DSC/DVCs
  • Networking – Machine-to-Machine (M2M) Devices, USB Dongles
  • Security – Fingerprint Detectors, Digital Surveillance
  • Client – Notebooks, Ultrathins, Convertibles, Detachables
  • Graphics – Portable Games
  • Medical - Patient Monitor, Defibrillator, Ptbl Ultrasound