New Product Introduction

Infineon Technologies CoolSiC™ MOSFETs 1700 V

CoolSiC™ MOSFETs 1700 V in SMD package - the next level of simplicity and safety

Infineon Technologies CoolSiC™ MOSFETs 1700 V product image

Infineon's first SiC MOSFET portfolio in 1700 V class is targeting the auxiliary power supply circuit, which generates power for control logic, displays, and cooling fans, in three-phase power systems. Industry's preferred practice for such low-power applications - the single-ended fly-back topology - can now be used even with up to 1000 VDC input voltage. 1700 V blocking voltage eliminates design concerns on voltage stress margin and reliability of power supply. 


Key features

  • Optimized for fly-back topologies
  • Extremely low switching loss
  • 12 V / 0 V gate-source voltage compatible with common PWM controllers
  • Fully controllable dV/dt for EMI optimization


Additional features

  • Low capacitances
  • Temperature independent switching losses
  • An intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics
  • SMD package with enhanced creepage and clearance distances > 7 mm

Additional Advantages

  • Superior gate oxide reliability
  • Best in class switching and conduction losses
  • IGBT compatible driving (+18 V)
  • The threshold voltage (Vth) greater than 4 V
  • Short-circuit and avalanche robustness

Additional Benefits

  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation 



  • Industrial drives
  • Fast EV charging
  • Power supplies (SMPS)
  • Energy Storage Systems
  • Solutions for solar energy systems


Available tools


  • 3300W CCM bidirectional totem-pole PFC unit using CoolSiC™ 650V , 600V CoolMOS™ C7 and digital control with XMC™2EDF7275F


  • This board has the purpose to enable the evaluation of the CoolSiC™ MOSFET in the TO-247 package with EiceDRIVER™ 1200 V isolated gate driver.
  • Order Code: EVALM5IMZ120RSICTOBO1 


  • The modular CoolSiC™ MOSFET evaluation platform is intended to evaluate the switching behavior of the MOSFET and the related driver which can be exchanged.


  • 1200 V single high-side gate driver IC with UL certified galvanic isolation, active Miller clamp, and short circuit clamping
  • Order Code: REFPSSICDP1TOBO1 


  • 1200 V single high-side gate driver IC with UL certified galvanic isolation, short circuit clamping and separate sink/source outputs
  • Order Code: REFPSSICDP2TOBO1

Infineon Technologies CoolSiC™ MOSFETs 1700 V | EBV Elektronik

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