New Product Introduction

Infineon 2ED218x EiceDRIVER™ 650 V half-bridge SOI gate driver family

Infineon broadens its EiceDRIVER™ portfolio with the new 2ED218x - high current 650 V, 2.5 A, half-bridge Silicon-on-Isolator (SOI) gate driver family

Infineon Technologies 2ED218x EiceDRIVER product image

Infineon broadens its EiceDRIVER™ portfolio with the new 2ED218x - high current 650 V, 2.5 A, half-bridge Silicon-on-Isolator (SOI) gate driver family and new 2ED210x - low current 650 V, 0.7 A, half-bridge SOI gate driver family. Both product families include two package options of DSO-8 and DSO-14.The products come with integrated ultra-fast bootstrap diode, excellent negative VS transi-ent immunity and independent under voltage lockout for high and low side output channels, suitable for MOSFETs and IGBTs.


Key features

  • Operating Voltages (VS node) up to 650 V
  • Negative VS Transient Immunity of 100 V
  • Integrated Ultra-fast, Low Resistance Bootstrap Diode, Lowers the BOM Cost
  • Shutdown Input Turns Off Both Channels (Selective Parts)

 

Additional features:

  • 200 ns propagation delay
  • Separate logic and power ground, shorten the gate loop (DSO-14 package)
  • Independent under-voltage lockout (UVLO) for both channels
  • Maximum supply voltage of 25 V
  • Integrated bootstrap diode (BSD) 
  • 50% lower level-shift losses with Infineon SOI technology for higher switching frequencies for SMPS and UPS applications
  • Excellent ruggedness and noise immunity against negative transient voltages (-100 V) on VS pin
  • No parasitic device structures present in the device, hence no parasitic latch-up at all temperature and voltage conditions


Applications

  • Industrial Drives
  • Motor Control and Drives
  • Switched Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Home Appliances

 

Infineon 2ED218x EiceDRIVER™ SOI Gate Driver Family | EBV Elektronik

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