New Product Introduction

Fujitsu MB85RS2MTY 2 mbit high temperature FRAM

The unique features of FRAM, being fast, durable and non-volatile at the same time, provide exactly a perfect solution for the classic dilemma between RAM and ROM

Fujitsu Electronics Europe GmbH MB85RS2MTY product image

The unique features of FRAM, being fast, durable and non-volatile at the same time, provide exactly a perfect solution for the classic dilemma between RAM and ROM. FRAM has a higher write speed than EEPROM and no polling time during writing. The endurance is 1013 (10 trillion) times which is 10 million times larger than EEPROM. Extended operation temperature range up to 125 °C and AEC-Q100 compliant. Optimized power-consumption due to "Hibernate mode" & "Deep power-down mode".


Key features

  • High Temperature: -40 °C to +125 °C
  • AEC-Q100 Compliant
  • Endurance: 1013 Read/Write per Byte
  • Ultra-low Power Consumption

 

Additional features:

  • High-Speed Overwrite
  • Nonvolatile Memory with Virtually Unlimited Write Cycles
  • Low Energy Consumption
  • High Temperature Range Supported: -40 °C to +125 °C

Benefits:

  • Secure Last Data Storage Before Power Down
  • Enable Instant Data Logging with High Granularity
  • Direct Data Storage Possible Instead of RAM-ROM Data Transfer
  • Simplify System Architecture and Reduce Error Source
  • Optimize Energy Consumption for Energy-critical Applications


Applications

  • Motor Control
  • Event Data Recorder
  • Battery Management
  • Electric Power Steering
  • Automatic Driver Assistance
  • High Temperature Applications

 

Fujitsu Electronics Europe GmbH MB85RS2MTY | EBV Elektronik

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