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WeEn 1200V silicon carbide diodes PFC

Fast and temperature-independant switching for high voltage, high frequency PFC

WeEn 1200V Silicon Carbide Diodes product picture

WeEn Silicon Carbide (SiC) 1200V Schottky diodes are designed for high-frequency switched-mode power supplies.


Key features

  • Highly Stable Switching Performance
  • Extremely Fast Reverse Recovery Time
  • High Forward Surge Current Capability IFSM
  • Superior in Efficiency to Silicon Diode Alternatives


Additional features

  • Reduced Losses in Associated MOSFET
  • Reduced EMI
  • Reduced Cooling Requirements
  • RoHS Compliant
  • High Junction Operating Temperature Capability (TJMAX = 175 °C)



  • Uninterruptable Power Supply (UPS)

WeEn 1200V silicon carbide diodes PFC | EBV Elektronik

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