New Product Information

Vishay SiSS05DN P-channel 30 V (D-S) MOSFET

Vishay introduced the new 30 V P-channel TrenchFET® Gen IV power MOSFET that offers industry-leading low ON-resistance of 3.5 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package

Vishay SiSS05DN product picture

Vishay introduced the new 30 V P-channel TrenchFET® Gen IV power MOSFET that offers industry-leading low ON-resistance of 3.5 mΩ at 10 V in the 3.3 mm by 3.3 mm thermally enhanced PowerPAK 1212-8S package, in addition to best in class on-resistance times gate charge - a critical figure of merit (FOM) for MOSFETs used in switching applications - of 172 mΩ x nC. Purpose-built to increase power density, the SiSS05DN is 65 % smaller than devices with similar on-resistance in 6 mm by 5 mm packages. The device's compact form factor is easier to fit into space-constrained designs. 

 

Key features

  • Provides Exceptionally Low RDS(ON) in a PowerPAK 1212-8S 3 x 3 mm² Package
  • Enables Higher Power Density
  • Smaller Dimensions Fit into Tight Design Space
  • 100 % Rg and UIS tested

 

Additional features

  • TrenchFET® Gen IV p-channel power MOSFET
  • Provides exceptionally low RDS(ON) in a compact package that is thermally enhanced
  • 65% reduction of PCB real estate for MOSFET
  • Equal or lower RDS(ON) of devices in 6 X 5 mm² package types
  • Enables higher power density
  • 100 % Rg and UIS tested

 

Applications

  • Battery management in mobile devices
  • Adapter and charger switch
  • Circuit protection
  • Load switch

 

Available tools

Calculator and parametric search

Vishay SiSS05DN P-Channel 30 V (D-S) MOSFET | EBV Elektronik

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