New Product Information

Vishay SIR680ADP-T1-RE3 N-Channel 80 V (D-S) MOSFET

Vishay introduced a new 80 V TrenchFET® Gen IV N-channel power MOSFET

Vishay SIR680ADP-T1-RE3 product picture

Vishay introduced a new 80 V TrenchFET® Gen IV N-channel power MOSFET. Designed to save energy by increasing the efficiency of power conversion topologies and switching circuitry, the SiR680ADP offers best in class ON-resistance times gate charge - a key figure of merit (FOM) for MOSFETs used in power conversion applications - of 129 mΩ x nC. The device combines ON-resistance down to 2.35 mΩ typical at 10 V with ultra low gate charge of 55 nC and COSS of 614 pF. The ON-resistance MOSFET is the most efficient solution available for typical 48 V input to 12 V output DC/DC converters. 

 

Key features

  • Industry Leading RDS x Qg FOM
  • Very Low Qg and Coss Enables Efficient Switching
  • FOM of 129 mΩ x nC
  • ON-resistance down to 2.35 mΩ

 

Additional features

  • Enables Higher Power Density:
    • Double cooled feature provides dual avenues for thermal transfer and heat sinking
    • Near symmetrical thermal resistance between top pad and bottom pad
    • Potential drop-in upgrade for PowerPAK SO-8
  • Very Low Qg and Coss Enables Efficient Switching:
    • High performance silicon for switching power supplies
    • Qg is 20% lower than similar products
    • Very low Coss of 614 pF reduces power loss from charging and discharging of capacitance
  • Industry Leading RDS x Qg FOM:
    • Typical RDS x Qg FOM = 129 mΩ x nC
    • FOM is 10% lower than the next best product in the same package
    • Reduces power losses and improves efficiency

 

Applications

  • Synchronous Rectification
  • Primary Side Switch
  • DC/DC Converters
  • Power OR-ing
  • Power Supplies
  • Motor Drive Control
  • Battery and Load Switch

 

Available tools

Vishay SIR680ADP-T1-RE3 MOSFET | EBV Elektronik

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