New Product Information

Vishay SiR626DP N-Channel 60 V (D-S) MOSFET

Vishay proudly present SiR626DP N-Channel 60 V (D-S) MOSFET

Vishay SiR626DP product picture

The new SiR626DP 60 V TrenchFET® MOSFET in PowerPAK SO-8 combines low RDS(ON) down to 1.7 mΩ with best-in-class gate charge of 52 nC and output charge of 68 nC, reducing power losses and increasing efficiency.

 

Key features

  • TrenchFET® Gen IV Power MOSFET
  • Very Low RDS - Qg Figure-of-Merit (FOM)
  • Tuned for the Lowest RDS - Qoss FOM
  • 100% Rg and UIS tested

 

Additional features

  • Low Maximum On-Resistance Down to 1.7 mΩ At 10 V Reduces Conduction Losses
  • Ultra-Low Gate Charge of 68 nC at VGS of 10 V and Output Charge Of 68 nC
  • Low COSS of 992 pF
  • Decreases Power Loss from Gate Driving, Charging, and Discharging Output Capacitance
  • Improves Efficiency in Synchronous Rectification and Switching Applications
  • Offered in the 6.15 mm x 5.15 mm Thermally Enhanced PowerPAK SO8 Package
  • 100% RG and UIS-Tested
  • RoHS-Compliant and Halogen-Free

 

Applications

  • Synchronous Rectification
  • Primary Side Switches
  • DC/DC Converters
  • Solar Micro-Inverters
  • Motor Drive Switches
  • Battery and Load Switches
  • Industrial

Vishay SiR626DP N-Channel 60 V (D-S) MOSFET | EBV Elektronik

Display portlet menu

Related parts

  • SIR626DP-T1-RE3


Do you have a Question?

Contact EBV

If you need any assistance, please click below to find your closest EBV sales office.

Links and documents



Related markets



Related technologies