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Taiwan Semiconductor N-Channel power MOSFET 30

Taiwan Semiconductor N-channel power MOSFETs are developed to increase efficiency

Taiwan Semiconductor MOSFETs product image

Taiwan Semiconductor N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designer benefit from a robust EAS Capability and a high power density package with MSL1 selection. Perfectly suitable for high temperature environment applications.

 

Key features

  • Low RDS(ON) to Minimize Conductive Losses
  • Low Gate Charge for Fast Power Switching
  • 100 % UIS and Rg Tested
  • 175 °C Operating Junction Temperature

 

Additional features

Performance

  • Robustness EAS Capability
  • High Power Density Package with MSL1 Selection

Robust

  • 175 °C Operating Junction Temperature
  • High Thermal Design Margin
  • Higher Surge Current Capability During Cold Load Start-up in a Rush
  • Suited for High-temperature Environment Applications

 

Applications

  • BLDC Motor Control
  • Battery Power Management
  • DC-DC Converters
  • Secondary Synchronous Rectification

Taiwan Semiconductor N-Channel power MOSFET 30 | EBV Elektronik

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