ON Semiconductor NxBG0x0N090SC1 silicon carbide MOSFET
Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon
Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, improved EMI, and reduced system size.
- 900 V rated
- High Speed Switching and Low Capacitance
- Typicall RDSon = 20 mΩ or 60 mΩ
- Automotive Grade Available, Qualified According to AEC−Q101, and PPAB Capable
- 100% UIL Tested
- Pb-Free, RoHS Compliant
- D2PAK 7-lead package
- Industrial Grade:
- NTBG020N090SC1 (20 mΩ)
- NTBG060N090SC1 (60 mΩ)
- Automotive Grade:
- NVBG020N090SC1 (20 mΩ)
- NVBG060N090SC1 (60 mΩ)
- DC/DC Converters
- PFC Boost Inverters
- Power Supply
- PV Photovoltaic Inverters and Charging
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