New Product Introduction

ON Semiconductor NxBG020N120SC1 silicon carbide MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon

ON Semiconductor NxBG020N120SC1 product image

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, improved EMI, and reduced system size.

 

Key features

  • 1200 V Rated
  • High Speed Switching and Low Capacitance
  • Typicall RDS(ON) = 20 mΩ
  • Automotive Grade Available, Qualified According to AEC−Q101, and PPAB Capable

 

Additional features

  • 100% UIL Tested
  • Pb−Free, RoHS Compliant
  • D2PAK 7-lead package
  • Industrial Grade:
    • NTBG020N120SC1 (20 mΩ)
  • Automotive Grade:
    • NVBG020N120SC1 (20 mΩ)

 

Applications

  • DC/DC Converters
  • PFC Boost Inverters
  • Power Supply
  • PV Photovoltaic Inverters and Charging

 

 

ON Semiconductor NxBG020N120SC1 Silicon Carbide MOSFET | EBV Elektronik

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