New Product Introduction

ON Semiconductor NVBG020N120SC1 silicon carbide MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability

ON Semiconductor NVBG020N120SC1 product image

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

 

Key features

  • 1200 V Rated
  • High Speed Switching and Low Capacitance
  • Max RDS(ON) = 28 mΩ at VGS = 20 V, ID = 60 A
  • Qualified for Automotive According to AEC-Q101

 

Additional features

  • 100% UIL Tested
  • Pb-Free, RoHS Compliant

 

Applications

  • PFC
  • Boost Inverter
  • PV Charging
  • Automotive DC/DC converter for EV/PHEV
  • Automotive On Board Charger
  • Automotive Auxiliary Motor Drive

 

Available tools

Simulation Models

ON Semiconductor NVBG020N120SC1 MOSFET | EBV Elektronik

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Related parts

  • NVBG020N120SC1


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