New Product Introduction

ON Semiconductor NTBG020N090SC1, NTHL0x0N090SC1 silicon carbide MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability

ON Semiconductor NTBG020N090SC1, NTHL0x0N090SC product image

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

 

Key features

  • 900 V Rated
  • High Speed Switching and Low Capacitance
  • Typicall RDSON = 20 mΩ or 60 mΩ
  • Automotive Grade Available, Qualified According to AEC−Q101, and PPAB Capable

 

Additional features

  • 100% UIL Tested
  • Pb−Free, RoHS Compliant
  • 900 V Rated
  • Industrial Grade:
    • NTBG020N090SC1 (20 mΩ, D2PAK−7L)
    • NTHL020N090SC1 (20 mΩ, TO247−3L)
    • NTHL060N090SC1 (60 mΩ, TO247−3L)
  • Automotive Grade:
    • NVBG020N090SC1 (20 mΩ, D2PAK−7L)
    • NVBG020N090SC1 (20 mΩ, TO247−3L)

 

Applications

  • DC/DC Converter
  • Power Supply
  • PV Charging
  • PFC Boost Inverter

 

ON Semiconductor NTBG020N090SC1,NTHL0x0N090SC1 MOSFET | EBV Elektronik

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Related parts

  • NTHL020N090SC1
  • NTHL060N090SC1
  • NTBG020N090SC1


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