New Product Introduction

ON Semiconductor AFGHL50T65SQDC 650V, 50A fieldstop hybrid IGBT

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application

ON Semiconductor AFGHL50T65SQDC product image

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.

 

Key features

  • Optimum Performance for Hard Switching Application
  • Co-Packaged Silicon-Based IGBT and SiC Schottky Barrier Diode
  • Automotive AEC Qualified, PPAP Capable
  • Very Low Switching and Conduction Losses

 

Additional features

  • Automotive AEC Qualified, PPAP Capable
  • Very Low Switching and Conduction Losses
  • Maximum Junction Temperature TJ=175 °C
  • Positive Temperature Co-Efficient
  • Co-packed With SiC Schottky Barrier Diode
  • Tight Parameter Distribution

 

Applications

  • Automotive
  • xEV On & Off Board Charger
  • Industrial Inverter
  • UPS
  • Solar Inverter
  • DC-DC Converter
  • Hard Switching


Available tools

Simulation Models

ON Semiconductor AFGHL50T65SQDC 650V hybrid IGBT | EBV Elektronik

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