New Product Introduction

NXP Semiconductors MRF24G300HS 300 W GaN RF energy transistor

The MRF24G300HS delivers up to 73% drain efficiency, 5% above the latest LDMOS

NXP Semiconductors MRF24G300HS product image

The new RF Energy GaN transistor from NXP is one of the first solid-state devices that exceeds the efficiency of magnetrons. The MRF24G300HS delivers up to 73% drain efficiency, 5% above the latest LDMOS. The naturally high output impedance of GaN enables a more broadband match than LDMOS, enabling manufacturing consistency: no production tuning is needed. GaN on SiC combines the high power density of Gallium Nitride with the superior thermal conductivity of Silicon-Carbide. At 48 V, the MRF24G300HS outputs 330 W of CW power. The MRF24G300HS has been designed for CW and long pulses (cycling).

 

Key features

  • 73% Efficiency at P1dB Enabling One of The Lowest Power Consumption Systems on The Market
  • High Gain and Lower Power Dissipation Reduces Total Cost
  • Easier to Match Thanks to High Output Impedance Ensuring Consistency in Manufacturing
  • Accurate Power Control, Larger Mean Time to Failure, Easy-to-Use

 

Additional features

  • Advanced GaN on SiC, for optimal thermal performance
  • Characterized for CW, long pulse (up to several seconds) and short pulse operations
  • Device can be used in a single-ended or push-pull configuration
  • Input matched for simplified input circuitry
  • Qualified up to 55 V
  • Suitable for linear application

 

Applications

  • Industrial Heating; Welding; Drying
  • Emerging Applications; Tune and Magnetron Replacement
  • Cooking; Microwave Oven
  • Medical; Diathermy; Ablation

 

Available tools

NXP's MRF24G300HS reference circuit has been designed to leverage the high efficiency of GaN-on-SiC for RF Energy applications at 2.45 GHz. The class C design removes the need for a complex power up sequence typical to GaN, with the gate voltage remaining steady at -5 V. For best heat dissipation, the transistor and the PCB are both soldered on a copper baseplate that fits into a compact 2.0″x2.8″.

Typical Applications: 

  • RF Energy for Industry 4.0
  • Industrial Heating, Plastic Welding
  • Drying
  • Smart Cooking: Microwave Oven
  • Medical: Diathermy, Microwave Ablation
  • Emerging Applications: High Level of Control Enabled by Solid-State RF Energy Opens The Door to New Use Cases.

NXP MRF24G300HS 300 W GaN RF energy transistor | EBV Elektronik

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