New Product Introduction

Infineon Technologies 3-level 1200 V CoolSiC™ MOSFET module

The F3L11MR12W2M1_B65 is the new 11 mΩ 3-level module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology

Infineon Technologies 3-Level 1200 V CoolSiC Module product picture

The F3L11MR12W2M1_B65 is the new 11 mΩ 3-level module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology. It extends the EasyPACK™ 2B family with a 3-level Active Neutral Point Clamped (ANPC) topology. The EasyPACK™ 2B module F3L11MR12W2M1_B65 offers full 1500 VDC capability with 1200 V switches at a maximum efficiency of 99.2%, high current density, as well as best in class switching and conduction losses.

 

Key features

  • Full 1500 VDC Capability (With 1200 V Switches)
  • High Current Density
  • Best in Class Switching and Conduction Losses
  • Low Inductive Design

 

Additional features

  • Integrated NTC Temperature Sensor
  • PressFIT Contact Technology
  • RoHS-Compliant Modules
  • Highest Efficiency for Reduced Cooling Effort
  • Higher Frequency Operation
  • Increased Power Density
  • Optimized Customer's Development Cycle Time and Cost

 

Applications

  • Energy Storage
  • Solutions for Solar Energy System

Infineon Technologies 3-level 1200 V CoolSiC™ module | EBV Elektronik

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Related parts

  • F3L11MR12W2M1B65BOMA1


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