New Product Introduction

Infineon 650 V TRENCHSTOP™ 5 S5 IGBT thin-wafer technology

650 V TRENCHSTOP™ 5 is recognized leading IGBT thin-wafer technology

Infineon 650 V TRENCHSTOP™ 5 S5 product image

650 V TRENCHSTOP™ 5 is recognized leading IGBT thin-wafer technology. Now also available in small footprint packages like TO-220-3 enables higher power designs in a compact size. Apart from high current density in small package low losses of the TRENCHSTOP™ 5 benefits to low junction temperature of the device, consequently less cooling, longer operational cycles and high life time expectancy.

Key features

  • 4 times Ic pulse current (100°C Tc)
  • Soft current fall characteristics with no tail current
  • Symmetrical, low voltage overshoot
  • Maximum junction temperature Tvj = 175°C


Additional features:

  • Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
  • Gate voltage under control (no oscillation). No risk of unwanted turn -on of device and no need for gate clamping
  • Qualified according to JEDEC standards
  • Benefits
  • Easy plug and play with silicon diodes
  • System efficiency improvement over Si diodes
  • Enabling higher frequency / increased power density solutions
  • System reliability improvement


  • Corded power tools
  • Motor control and drives


Infineon 650 V TRENCHSTOP™ 5 S5 | EBV Elektronik

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